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IPP65R045C7XKSA1

IPP65R045C7XKSA1
Mfr. #:
IPP65R045C7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP65R045C7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPP65R045C7XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
46 A
Rds On - 드레인 소스 저항:
40 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
93 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
227 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
키:
15.65 mm
길이:
10 mm
시리즈:
CoolMOS C7
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
가을 시간:
7 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
82 ns
일반적인 켜기 지연 시간:
20 ns
부품 번호 별칭:
IPP65R045C7 SP000929422
단위 무게:
0.211644 oz
Tags
IPP65R04, IPP65R0, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 650 V 45 mOhm CoolMOSTM C7 Power Transistor-PG-TO-220-3
***ical
Trans MOSFET N-CH 650V 46A Automotive 3-Pin(3+Tab) TO-220 Tube
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
부분 # 제조 설명 재고 가격
IPP65R045C7XKSA1
DISTI # IPP65R045C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 46A TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 500:$8.3387
  • 100:$9.7764
  • 10:$11.5020
  • 1:$12.6500
IPP65R045C7XKSA1
DISTI # IPP65R045C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 46A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R045C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$7.4900
  • 1000:$7.1900
  • 2000:$6.8900
  • 3000:$6.6900
  • 5000:$6.5900
IPP65R045C7XKSA1
DISTI # SP000929422		Infineon Technologies AGTrans MOSFET N-CH 700V 46A 3-Pin TO-220 Tube (Alt: SP000929422)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€7.8900
  • 10:€7.1900
  • 25:€6.8900
  • 50:€6.5900
  • 100:€6.3900
  • 500:€6.1900
  • 1000:€5.7900
IPP65R045C7XKSA1
DISTI # IPP65R045C7		Infineon Technologies AGTrans MOSFET N-CH 700V 46A 3-Pin TO-220 Tube (Alt: IPP65R045C7)
RoHS: Compliant
Min Qty: 500
Container: Tube		Asia - 0
  • 500:$7.4686
  • 1000:$7.2611
  • 1500:$7.0649
  • 2500:$6.8789
  • 5000:$6.7896
  • 12500:$6.7026
  • 25000:$6.6177
IPP65R045C7
DISTI # 726-IPP65R045C7		Infineon Technologies AGMOSFET N-Ch 650V 46A TO220-3 CoolMOS C7
RoHS: Compliant		1
  • 1:$10.9800
  • 10:$10.1000
  • 25:$9.6800
  • 100:$8.5300
  • 250:$8.1100
  • 500:$7.5900
IPP65R045C7XKSA1
DISTI # 726-IPP65R045C7XKSA1		Infineon Technologies AGMOSFET N-Ch 650V 46A TO220-3 CoolMOS C7
RoHS: Compliant		0
  • 1:$10.9800
  • 10:$10.1000
  • 25:$9.6800
  • 100:$8.5300
  • 250:$8.1100
  • 500:$7.5900
  • 1000:$6.9600
IPP65R045C7XKSA1
DISTI # IPP65R045C7		Infineon Technologies AGN-Ch 650V 46A 227W 0,045R TO220
RoHS: Compliant		0
  • 1:€14.1500
  • 10:€11.1500
  • 50:€9.6500
  • 100:€8.8500
IPP65R045C7XKSA1
DISTI # 2480861		Infineon Technologies AGMOSFET, N-CH, 650V, 46A, TO-220-3
RoHS: Compliant		0
  • 1:£8.9500
  • 5:£8.3800
  • 10:£7.3900
  • 50:£6.9500
  • 100:£6.5100
IPP65R045C7XKSA1
DISTI # 2480861		Infineon Technologies AGMOSFET, N-CH, 650V, 46A, TO-220-3
RoHS: Compliant		0
  • 1:$17.3800
  • 10:$15.9900
  • 25:$15.3200
  • 100:$13.5000
  • 250:$12.8400
  • 500:$12.0200
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OMO.#: OMO-U-FL-R-SMT-1-10--HIROSE

 신규 및 오리지널
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Mfr.#: AP.10H.01

OMO.#: OMO-AP-10H-01-TAOGLAS

 Antennas GPS Act SMT Patch 10*10*4mm
IPP65R045C7

Mfr.#: IPP65R045C7

OMO.#: OMO-IPP65R045C7-1190

 Trans MOSFET N-CH 650V 46A
유효성
재고:
Available
주문 시:
1984
수량 입력:
IPP65R045C7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$10.97
US$10.97
10
US$10.09
US$100.90
25
US$9.67
US$241.75
100
US$8.52
US$852.00
250
US$8.10
US$2 025.00
500
US$7.58
US$3 790.00
1000
US$6.95
US$6 950.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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