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IRLU7807ZPBF

IRLU7807ZPBF
Mfr. #:
IRLU7807ZPBF
제조사:
Infineon / IR
설명:
MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLU7807ZPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU7807ZPBF DatasheetIRLU7807ZPBF Datasheet (P4-P6)IRLU7807ZPBF Datasheet (P7-P9)IRLU7807ZPBF Datasheet (P10-P12)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
43 A
Rds On - 드레인 소스 저항:
18.2 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
7 nC
Pd - 전력 손실:
40 W
구성:
하나의
포장:
튜브
키:
6.22 mm
길이:
6.73 mm
트랜지스터 유형:
1 N-Channel
너비:
2.38 mm
상표:
인피니언 / IR
상품 유형:
MOSFET
공장 팩 수량:
75
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001568878
단위 무게:
0.139332 oz
Tags
IRLU7, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 43A, 13.8 MOHM, 7 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.8mohm; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:40mW; Pulse Current Idm:170A; SMD Marking:40; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:9.8ns; Turn On Time:7.1ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***ponent Stockers USA
7.8 A 25 V 0.014 ohm N-CHANNEL Si POWER MOSFET
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N, 25V, I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:25V; Current, Id Cont:45A; Resistance, Rds On:0.0117ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:50W; Voltage, Vds Max:25V
***emi
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
***ser
MOSFETs- Power and Small Signal 25V 45A N-Channel
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
Power MOSFET 30V 54A 10 mOhm Single N-Channel DPAK
***ser
MOSFETs- Power and Small Signal NFET 30V 54A 10MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:54A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:50W ;RoHS Compliant: Yes
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:47W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:47W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***inecomponents.com
25V,35A,14OHM, NCH, IPAK, POWER TRENCH MOSFET
***Yang
MOSFET 25V N-Channel PowerTrench MOSFET - Bulk
***r Electronics
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO251-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
부분 # 제조 설명 재고 가격
IRLU7807ZPBF
DISTI # IRLU7807ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 43A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU7807ZPBF
    DISTI # 70018000    		Infineon Technologies AGMOSFET,N Ch.,30V,43A,13.8 MOHM,7 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5200
    IRLU7807ZPBF
    DISTI # 942-IRLU7807ZPBF    		Infineon Technologies AGMOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
    RoHS: Compliant    		0
      IRLU7807ZPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 2250
        IRLU7807ZPBF
        DISTI # 1436997        		Infineon Technologies AG 
        RoHS: Compliant        		0
        • 1:$2.5200
        • 10:$2.0700
        영상 부분 # 설명
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        OMO.#: OMO-IRLU7843-1190

        		 신규 및 오리지널
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        Mfr.#: IRLU7843-701PBF

        OMO.#: OMO-IRLU7843-701PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 161A IPAK
        IRLU7807ZPBF

        Mfr.#: IRLU7807ZPBF

        OMO.#: OMO-IRLU7807ZPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 43A 13.8mOhm 30V 7nC Qg log lvl
        유효성
        재고:
        Available
        주문 시:
        1000
        수량 입력:
        IRLU7807ZPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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