SSM6J212FE,LF

SSM6J212FE,LF
Mfr. #:
SSM6J212FE,LF
제조사:
Toshiba
설명:
MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SSM6J212FE,LF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM6J212FE,LF DatasheetSSM6J212FE,LF Datasheet (P4-P6)
ECAD Model:
추가 정보:
SSM6J212FE,LF 추가 정보
제품 속성
속성 값
제조사:
도시바
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
ES6-6
채널 수:
1 Channel
트랜지스터 극성:
P-채널
Vds - 드레인 소스 항복 전압:
20 V
Id - 연속 드레인 전류:
4 A
Rds On - 드레인 소스 저항:
94 mOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
8 V
Qg - 게이트 차지:
14.1 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
500 mW (1/2 W)
구성:
하나의
포장:
키:
0.55 mm
길이:
1.6 mm
시리즈:
SSM6J212
트랜지스터 유형:
1 P-Channel
너비:
1.2 mm
상표:
도시바
상품 유형:
MOSFET
공장 팩 수량:
4000
하위 카테고리:
MOSFET
단위 무게:
0.001270 oz
Tags
SSM6J212, SSM6J21, SSM6J2, SSM6J, SSM6, SSM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
U-MOS VI Small Signal MOSFETs
Toshiba U-MOS VI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. Offered in single, dual, n-channel, p-channel and various voltage versions, they offer a wide variety of options for the design engineer. Each address the need to support high-current charging with low voltage and low RDS(on) requirements. These compact packages and and low voltage operation make them ideal solutions for high-density packaging requirements in smart phones and game consoles.
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유효성
재고:
20
주문 시:
2003
수량 입력:
SSM6J212FE,LF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.49
US$0.49
10
US$0.36
US$3.62
100
US$0.23
US$22.80
1000
US$0.17
US$171.00
시작
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