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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSZ060NE2LSATMA1 DISTI # 31278951 | Infineon Technologies AG | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R RoHS: Compliant | 5000 |
|
| BSZ060NE2LSATMA1 DISTI # BSZ060NE2LSATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 12A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 15641In Stock |
|
| BSZ060NE2LSATMA1 DISTI # BSZ060NE2LSATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 12A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 15641In Stock |
|
| BSZ060NE2LSATMA1 DISTI # BSZ060NE2LSATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 12A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 15000In Stock |
|
| BSZ060NE2LS DISTI # C1S322000395688 | Infineon Technologies AG | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R RoHS: Compliant | 63 |
|
| BSZ060NE2LS DISTI # BSZ060NE2LS | Infineon Technologies AG | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R (Alt: BSZ060NE2LS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSZ060NE2LSATMA1 DISTI # BSZ060NE2LSATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ060NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSZ060NE2LSATMA1 DISTI # SP000776122 | Infineon Technologies AG | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R (Alt: SP000776122) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
| BSZ060NE2LSATMA1 DISTI # 50Y1830 | Infineon Technologies AG | MOSFET Transistor, N Channel, 40 A, 25 V, 0.005 ohm, 10 V, 2 V , RoHS Compliant: Yes | 0 |
|
| BSZ060NE2LSATMA1. DISTI # 29AC2879 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:26W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSZ060NE2LS | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSZ060NE2LSATMA1 DISTI # 726-BSZ060NE2LSATMA1 | Infineon Technologies AG | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSZ060NE2LS DISTI # 726-BSZ060NE2LS | Infineon Technologies AG | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSZ060NE2LSATMA1 DISTI # 8275296P | Infineon Technologies AG | MOSFET N-CH 12A 25V OPTIMOS TSDSON8EP, RL | 5000 |
|
| BSZ060NE2LSATMA1 DISTI # BSZ060NE2LSATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,25V,40A,26W,PG-TSDSON-8 | 3841 |
|
| BSZ060NE2LS | Infineon Technologies AG | 25V,6m,40A,N-Channel Power MOSFET | 50 |
|
| BSZ060NE2LSATMA1 DISTI # 2480782 | Infineon Technologies AG | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant | 0 |
|
| BSZ060NE2LSATMA1 DISTI # 2480782RL | Infineon Technologies AG | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant | 0 |
|
| BSZ060NE2LSATMA1 DISTI # 2480782 | Infineon Technologies AG | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSZ067N06LS3GATMA1 OMO.#: OMO-BSZ067N06LS3GATMA1 |
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSZ060NE2LSATMA1 OMO.#: OMO-BSZ060NE2LSATMA1 |
MOSFET N-Ch 25V 40A TDSON-8 OptiMOS |
|
|
Mfr.#: BSZ065N03LS OMO.#: OMO-BSZ065N03LS |
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS |
|
Mfr.#: BSZ068N06NSATMA1 OMO.#: OMO-BSZ068N06NSATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSZ065N03L OMO.#: OMO-BSZ065N03L-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSZ067N06LS3 OMO.#: OMO-BSZ067N06LS3-1190 |
신규 및 오리지널 |
|
Mfr.#: BSZ068N06NSATMA1 |
MOSFET N-CH 60V 40A 8TSDSON |
|
|
Mfr.#: BSZ060NE2LSATMA1-CUT TAPE |
신규 및 오리지널 |
|
|
Mfr.#: BSZ065N06LS5ATMA1-CUT TAPE |
신규 및 오리지널 |
|
|
Mfr.#: BSZ068N06NSATMA1-CUT TAPE |
신규 및 오리지널 |