ISL9R8120S3ST

ISL9R8120S3ST
Mfr. #:
ISL9R8120S3ST
제조사:
ON Semiconductor / Fairchild
설명:
Diodes - General Purpose, Power, Switching 8A 1200V STEALTH
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
ISL9R8120S3ST 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
다이오드 - 범용, 전원, 스위칭
RoHS:
E
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263AB
피크 역전압:
1200 V
최대 서지 전류:
100 A
If - 순방향 전류:
8 A
구성:
하나의
회복 시간:
44 ns
Vf - 순방향 전압:
3.3 V
Ir - 역전류:
100 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
ISL9R8120S3S
포장:
키:
4.83 mm
길이:
10.67 mm
유형:
스위칭 다이오드
너비:
9.65 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
다이오드 - 범용, 전원, 스위칭
공장 팩 수량:
800
하위 카테고리:
다이오드 및 정류기
Vr - 역 전압:
1200 V
단위 무게:
0.046296 oz
Tags
ISL9R81, ISL9R8, ISL9R, ISL9, ISL
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Diode Ultra Fast Recovery Rectifier 1.2KV 8A 3-Pin (2+Tab) TO-263AB T/R
***ment14 APAC
FAST DIODE, 8A, 1.2KV, TO-263AB; Diode T; FAST DIODE, 8A, 1.2KV, TO-263AB; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):8A; Forward Voltage VF Max:2.8V; Reverse Recovery Time trr Max:35ns
***nell
DIODE, FAST, 8A, 1200V, SMD, D2-PAK; Voltage, Vrrm:1200V; Current, If av:8A; Current, Ifsm:100A; Time, trr typ:25ns; Case style:D2-PAK; Current, Ifs max:100A; Current, forward If:8mA; Diode type:Fast Recovery; Pins, No. of:2; Temperature, Tj max:150°C; Termination Type:SMD; Time, trr max:44ns; Voltage, Vf max:3.1V; Voltage, forward at If:2.8V
***rchild Semiconductor
The ISL9R18120S3S is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
부분 # 제조 설명 재고 가격
ISL9R8120S3ST
DISTI # ISL9R8120S3STFSTR-ND
ON SemiconductorDIODE GEN PURP 1.2KV 8A TO263
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    ISL9R8120S3ST
    DISTI # ISL9R8120S3STFSCT-ND
    ON SemiconductorDIODE GEN PURP 1.2KV 8A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      ISL9R8120S3ST
      DISTI # ISL9R8120S3STFSDKR-ND
      ON SemiconductorDIODE GEN PURP 1.2KV 8A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        ISL9R8120S3ST
        DISTI # 512-ISL9R8120S3ST
        ON SemiconductorDiodes - General Purpose, Power, Switching 8A 1200V STEALTH
        RoHS: Compliant
        0
          ISL9R8120S3STFairchild Semiconductor Corporation8A, 1200V, SILICON, RECTIFIER DIODE, TO-263AB6240
          • 674:$1.3500
          • 361:$1.4850
          • 1:$3.6000
          영상 부분 # 설명
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          ISL9R8120P2

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          Diodes - General Purpose, Power, Switching 8A 1200V STEALTH
          ISL9R8120S3S

          Mfr.#: ISL9R8120S3S

          OMO.#: OMO-ISL9R8120S3S-1190

          신규 및 오리지널
          ISL9R860P2 ,R860P2

          Mfr.#: ISL9R860P2 ,R860P2

          OMO.#: OMO-ISL9R860P2-R860P2-1190

          신규 및 오리지널
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          Mfr.#: ISL9R860PF2(R860PF2)

          OMO.#: OMO-ISL9R860PF2-R860PF2--1190

          신규 및 오리지널
          ISL9R860PF2,ISL9R860P2,I

          Mfr.#: ISL9R860PF2,ISL9R860P2,I

          OMO.#: OMO-ISL9R860PF2-ISL9R860P2-I-1190

          신규 및 오리지널
          ISL9R860PF2-NL

          Mfr.#: ISL9R860PF2-NL

          OMO.#: OMO-ISL9R860PF2-NL-1190

          신규 및 오리지널
          ISL9R8120S3ST

          Mfr.#: ISL9R8120S3ST

          OMO.#: OMO-ISL9R8120S3ST-ON-SEMICONDUCTOR

          DIODE GEN PURP 1.2KV 8A TO263
          ISL9R860S3ST

          Mfr.#: ISL9R860S3ST

          OMO.#: OMO-ISL9R860S3ST-ON-SEMICONDUCTOR

          DIODE GEN PURP 600V 8A TO263-2
          유효성
          재고:
          Available
          주문 시:
          5500
          수량 입력:
          ISL9R8120S3ST의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          시작
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