IRF8707PBF

Mfr. #:: IRF8707PBF
제조사:: Infineon / IR
설명:: MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF8707PBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF8707PBF Datasheet IRF8707PBF Datasheet (P4-P6)IRF8707PBF Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 11 A

Rds On - 드레인 소스 저항:: 17.5 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 6.2 nC

Pd - 전력 손실:: 2.5 W

구성:: 하나의

포장:: 튜브

키:: 1.75 mm

길이:: 4.9 mm

트랜지스터 유형:: 1 N-Channel

너비:: 3.9 mm

상표:: 인피니언 / IR

상품 유형:: MOSFET

공장 팩 수량:: 95

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001560112

단위 무게:: 0.019048 oz

Tags: IRF870, IRF87, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8707PBF 설명

***Components: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ied Electronics & Automation: IRF8707PBF N-channel MOSFET Transistor,11 A, 30 V, 8-Pin SOIC

***p One Stop Global: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC Tube

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***trelec: MOSFET Operating temperature: -55...+150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC Tube

***p One Stop Japan: Trans MOSFET N-CH 30V 11A 8-Pin SOIC

***ment14 APAC: 场效应管, N 通道, MOSFET, 30V, 11A, SOIC;

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***i-Key: MOSFET N-CH 30V 11A 8-SOIC

***ronik: N-CH 30V 11A 11,9mOhm SO8 RoHSconf

***ukat: N-Ch 30V 11A 2,5W 0,0119R SO8

***ark: Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.9mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:6.2nC; No. of Pins:8 ;RoHS Compliant: Yes

***nell: MOSFET, N SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:11A; On State Resistance:0.0119ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8 (SOIC-8); Termination Type:SMD; Max Voltage Vds:30V; Power Dissipation Pd:2.5W; Pulse Current Idm:88A; Typ Charge Qrr @ Tj = 25°C:6.2nC; Voltage Vds:30V; Transistor Case Style:SO

Market price

부분 #	제조	설명	재고	가격
IRF8707PBF DISTI # IRF8707PBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF8707PBF DISTI # 58M7423	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 11A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0119ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes	129	1:$0.5360 10:$0.4480 100:$0.2730 500:$0.2430 1000:$0.2110 2500:$0.1810 10000:$0.1670
IRF8707PBF DISTI # 942-IRF8707PBF	Infineon Technologies AG	MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC RoHS: Compliant	0
IRF8707PBF	International Rectifier	Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA RoHS: Compliant	5225	1000:$0.2000 500:$0.2100 100:$0.2200 25:$0.2300 1:$0.2400
IRF8707PBF DISTI # 495871	Infineon Technologies AG	MOSFET N-CHANNEL 30V 11A HEXFET SOIC8, PK	375	10:£0.4360 50:£0.3700 200:£0.3270 500:£0.2830
IRF8707TRPBF DISTI # IRF8707PBF-GURT	Infineon Technologies AG	N-Ch 30V 11A 2,5W 0,0119R SO8 RoHS: Compliant	0	50:€0.2050 100:€0.1650 500:€0.1450 2000:€0.1395
IRF8707PBF DISTI # 1551900	Infineon Technologies AG	MOSFET, N SO-8 RoHS: Compliant	0	1:$0.9970 10:$0.8340 100:$0.5090 1000:$0.3930 2500:$0.3580

관련 상품

영상

부분 #

설명

Mfr.#: IRF8707TRPBF

OMO.#: OMO-IRF8707TRPBF

MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg

Mfr.#: IRF8707TRPBF

OMO.#: OMO-IRF8707TRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 11A 8-SOIC

유효성

재고:: Available
주문 시:: 2000
수량 입력:

IRF8707PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

IRF870 11
IRF87 53
IRF8 314
IRF 8615

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IRF8707PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes