ISL9R18120G2

Mfr. #:: ISL9R18120G2
제조사:: ON Semiconductor
설명:: DIODE GEN PURP 1.2KV 18A TO247
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: ISL9R18120G2 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: 다이오드, 정류기 - 단일

시리즈: 몰래 하기

포장: 튜브

패키지 케이스: TO-247-2

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

속도: Fast Recovery = 200mA (Io)

다이오드형: 기준

전류 역 누설 Vr: 100μA @ 1200V

Voltage-Forward-Vf-Max-If: 3.3V @ 18A

전압-DC-역방향-Vr-최대: 1200V (1.2kV)

전류 평균 정류 Io: 18A

역복구-시간-trr: 70ns

커패시턴스-Vr-F: -

작동-온도-접점: -55°C ~ 150°C

Tags: ISL9R18, ISL9R1, ISL9R, ISL9, ISL

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ISL9R18120G2 설명

***ical: Diode Switching 1.2KV 15A 2-Pin(2+Tab) TO-247 Tube

***et: TO-247, SINGLE, 1200V 18A HFST ULTRASOFT RECTIFIER

***Semiconductor: 18A, 1200V, STEALTH™ Diode

***i-Key: DIODE FAST REC 1.2KV 18A TO247

***ment14 APAC: Prices include import duty and tax.

***ark: RAIL/1200V, 18A, STEALTH DIODES

***nell: DIODE, FAST, 18A, 1200V, TO-247; Diode Type:Fast Recovery; Voltage, Vrrm:1200V; Current, If AV:18A; Current, Ifsm:200A; Time, trr Typ:38ns; Voltage, Vf Max:3.3V; Temperature, Tj Max:150°C; Termination Type:Through Hole; Case Style:TO-247; No. of Pins:2; Current, Ifs Max:200A; Forward Voltage:3.3V; Time, trr Max:70ns; Current, Ifrm:36A

***rchild Semiconductor: The ISL9R18120G2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

***inecomponents.com: The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49414.

Market price

부분 #	제조	설명	재고	가격
ISL9R18120G2 DISTI # ISL9R18120G2-ND	ON Semiconductor	DIODE GEN PURP 1.2KV 18A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	1350:$1.8967 900:$2.2490 450:$2.5064 10:$3.2240 1:$3.5900
ISL9R18120G2 DISTI # ISL9R18120G2	ON Semiconductor	Diode Switching 1.2KV 15A 2-Pin(2+Tab) TO-247 Rail - Rail/Tube (Alt: ISL9R18120G2) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.4900 900:$1.4900 1800:$1.4900 2700:$1.3900 4500:$1.3900
ISL9R18120G2 DISTI # 29H0496	ON Semiconductor	Diode Switching 1.2KV 15A 2-Pin(2+Tab) TO-247 Rail - Bulk (Alt: 29H0496) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$3.7200 10:$3.3500 25:$3.2100 50:$3.0700 100:$2.9200 250:$2.7800 500:$2.6400
ISL9R18120G2 DISTI # 29H0496	ON Semiconductor	RECTIFIER, SINGLE, 1.2KV, 18A, TO-247,Repetitive Reverse Voltage Vrrm Max:1.2kV,Forward Current If(AV):18A,Diode Configuration:Single,Forward Voltage VF Max:3.3V,Reverse Recovery Time trr Max:70ns,Diode Case Style:TO-247 , RoHS Compliant: Yes	366	1:$3.7200 10:$3.3500 25:$3.2100 50:$3.0700 100:$2.9200 250:$2.7800 500:$2.6400
ISL9R18120G2 DISTI # 512-ISL9R18120G2	ON Semiconductor	Diodes - General Purpose, Power, Switching 18A 1200V Stealt RoHS: Compliant	0	1:$3.4200 10:$2.9100 100:$2.5200 250:$2.3900
ISL9R18120G2_Q DISTI # 512-ISL9R18120G2_Q	ON Semiconductor	Diodes - General Purpose, Power, Switching 18A 1200V Stealt RoHS: Not compliant	0
ISL9R18120G2	Fairchild Semiconductor Corporation	Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247 RoHS: Compliant	198	1000:$2.7500 500:$2.9000 100:$3.0100 25:$3.1400 1:$3.3900
ISL9R18120G2	Fairchild Semiconductor Corporation		38
ISL9R18120G2	Fairchild Semiconductor Corporation		48	47:$1.4300 14:$1.6250 1:$2.6000
ISL9R18120G2	Fairchild Semiconductor Corporation	INSTOCK	493
ISL9R18120G2 DISTI # 1495117	ON Semiconductor	RoHS: Compliant	0	1:$5.4100 10:$4.6100 100:$3.9900 250:$3.7800

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	Mfr.#: ISL9R1560S3S OMO.#: OMO-ISL9R1560S3S-1190	신규 및 오리지널
	Mfr.#: ISL9R18120G2 OMO.#: OMO-ISL9R18120G2-ON-SEMICONDUCTOR	DIODE GEN PURP 1.2KV 18A TO247
	Mfr.#: ISL9R1560P2 OMO.#: OMO-ISL9R1560P2-ON-SEMICONDUCTOR	DIODE GEN PURP 600V 15A TO220AC