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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC047N08NS3GATMA1 DISTI # V36:1790_06383116 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R RoHS: Compliant | 30000 |
|
| BSC047N08NS3GATMA1 DISTI # V72:2272_06383116 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R RoHS: Compliant | 403 |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 Min Qty: 1 Container: Cut Tape (CT) | 5324In Stock |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 Min Qty: 1 Container: Digi-Reel® | 5324In Stock |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 100A TDSON-8 Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSC047N08NS3GATMA1 DISTI # 33961748 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R RoHS: Compliant | 30000 |
|
| BSC047N08NS3GATMA1 DISTI # 32723461 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R RoHS: Compliant | 403 |
|
| BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC047N08NS3GATMA1. DISTI # 31AC8216 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:80V,On Resistance Rds(on):4.7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:125W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| BSC047N08NS3 G DISTI # 726-BSC047N08NS3G | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 9712 |
|
| BSC047N08NS3GATMA1 DISTI # 726-BSC047N08NS3GATM | Infineon Technologies AG | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 2184 |
|
| BSC047N08NS3GATMA1 DISTI # 1787494 | Infineon Technologies AG | On a Reel of 5000, BSC047N08NS3GATMA1 N-Channel MOSFET, 100 A, 80 V OptiMOS 3, 8-Pin TDSON Infineon, RL Min Qty: 5000 Container: Reel | 0 |
|
| BSC047N08NS3GATMA1 DISTI # 9064347 | Infineon Technologies AG | In a Pack of 10, BSC047N08NS3GATMA1 N-Channel MOSFET, 100 A, 80 V OptiMOS 3, 8-Pin TDSON Infineon, PK Min Qty: 10 Container: Package | 15770 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC047N08NS3 G OMO.#: OMO-BSC047N08NS3-G |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC047N08NS3GATMA1 OMO.#: OMO-BSC047N08NS3GATMA1 |
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC047N08NS OMO.#: OMO-BSC047N08NS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC047N08NS3 OMO.#: OMO-BSC047N08NS3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC047N08NS3 G OMO.#: OMO-BSC047N08NS3-G-1190 |
MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1 |
|
|
Mfr.#: BSC047N08NS3G OMO.#: OMO-BSC047N08NS3G-1190 |
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G) |
|
Mfr.#: BSC047N08NS3GATMA1 |
MOSFET N-CH 80V 100A TDSON-8 |
|
|
Mfr.#: BSC047N08NS3GS OMO.#: OMO-BSC047N08NS3GS-1190 |
신규 및 오리지널 |
|
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Mfr.#: BSC047N08NSG OMO.#: OMO-BSC047N08NSG-1190 |
신규 및 오리지널 |