IPD30N03S4L14ATMA1

IPD30N03S4L14ATMA1
Mfr. #:
IPD30N03S4L14ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 30V 30A TO252-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD30N03S4L14ATMA1 데이터 시트
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HTML Datasheet:
IPD30N03S4L14ATMA1 DatasheetIPD30N03S4L14ATMA1 Datasheet (P4-P6)IPD30N03S4L14ATMA1 Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
Tags
IPD30N03S4, IPD30N03, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 50, N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S4L14ATMA1
***ical
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***ronik
MOSFET 30V 13.6mOHM AECQ TO252
***ark
MOSFET, N-CH, 30V, 30A, TO-252-3
***i-Key
MOSFET N-CH 30V 30A TO252-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:31W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 30V 30A TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0112ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:31W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
부분 # 제조 설명 재고 가격
IPD30N03S4L14ATMA1
DISTI # V72:2272_06391091
Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2054
  • 1000:$0.3312
  • 500:$0.4275
  • 250:$0.5208
  • 100:$0.5263
  • 25:$0.6280
  • 10:$0.7675
  • 1:$0.9275
IPD30N03S4L14ATMA1
DISTI # V36:1790_06391091
Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.2325
  • 1250000:$0.2328
  • 250000:$0.2561
  • 25000:$0.2971
  • 2500:$0.3039
IPD30N03S4L14ATMA1
DISTI # IPD30N03S4L14ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2152In Stock
  • 1000:$0.3454
  • 500:$0.4317
  • 100:$0.5461
  • 10:$0.7120
  • 1:$0.8100
IPD30N03S4L14ATMA1
DISTI # IPD30N03S4L14ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2152In Stock
  • 1000:$0.3454
  • 500:$0.4317
  • 100:$0.5461
  • 10:$0.7120
  • 1:$0.8100
IPD30N03S4L14ATMA1
DISTI # IPD30N03S4L14ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.2655
  • 12500:$0.2725
  • 5000:$0.2829
  • 2500:$0.3039
IPD30N03S4L14ATMA1
DISTI # 26195757
Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2054
  • 23:$0.9275
IPD30N03S4L14ATMA1
DISTI # SP000275919
Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000275919)
RoHS: Compliant
Min Qty: 2500
Europe - 160000
  • 25000:€0.2689
  • 15000:€0.2889
  • 10000:€0.3219
  • 5000:€0.3609
  • 2500:€0.4259
IPD30N03S4L14ATMA1
DISTI # IPD30N03S4L14ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N03S4L14ATMA1)
Min Qty: 1389
Container: Bulk
Americas - 0
  • 13890:$0.2279
  • 6945:$0.2319
  • 4167:$0.2399
  • 2778:$0.2499
  • 1389:$0.2589
IPD30N03S4L14ATMA1
DISTI # IPD30N03S4L14ATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L14ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.2529
  • 15000:$0.2579
  • 10000:$0.2669
  • 5000:$0.2769
  • 2500:$0.2869
IPD30N03S4L14ATMA1
DISTI # 50Y2031
Infineon Technologies AGMOSFET Transistor, N Channel, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V RoHS Compliant: Yes1976
  • 1000:$0.3650
  • 500:$0.4570
  • 250:$0.5360
  • 100:$0.6160
  • 50:$0.6770
  • 25:$0.7390
  • 10:$0.8000
  • 1:$0.9090
IPD30N03S4L-14
DISTI # 726-IPD30N03S4L-14
Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
RoHS: Compliant
2699
  • 1:$0.7400
  • 10:$0.6190
  • 100:$0.4000
  • 1000:$0.3200
  • 2500:$0.2700
  • 10000:$0.2600
  • 25000:$0.2500
IPD30N03S4L14ATMA1Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant
86200
  • 1000:$0.2400
  • 500:$0.2500
  • 100:$0.2600
  • 25:$0.2700
  • 1:$0.2900
IPD30N03S4L14ATMA1
DISTI # 8269474P
Infineon Technologies AGMOSFET N-CH 30A 30V OPTIMOS-T2 TO252, RL450
  • 2500:£0.2080
  • 1250:£0.2130
  • 1000:£0.2190
  • 500:£0.2630
IPD30N03S4L14ATMA1
DISTI # 2480826
Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant
1976
  • 2500:$0.4070
  • 1000:$0.4820
  • 100:$0.6030
  • 10:$0.9330
  • 1:$1.1200
IPD30N03S4L14ATMA1
DISTI # 2480826RL
Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-3
RoHS: Compliant
0
  • 2500:$0.4070
  • 1000:$0.4820
  • 100:$0.6030
  • 10:$0.9330
  • 1:$1.1200
IPD30N03S4L14ATMA1
DISTI # 2480826
Infineon Technologies AGMOSFET, N-CH, 30V, 30A, TO-252-31095
  • 500:£0.3600
  • 250:£0.4230
  • 100:£0.4860
  • 10:£0.6860
  • 1:£0.8240
IPD30N03S4L14ATMA1
DISTI # XSKDRABV0051973
Infineon Technologies AG 
RoHS: Compliant
7500 in Stock0 on Order
  • 7500:$0.3413
  • 2500:$0.3657
영상 부분 # 설명
IPD30N03S2L20ATMA1

Mfr.#: IPD30N03S2L20ATMA1

OMO.#: OMO-IPD30N03S2L20ATMA1

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-10

Mfr.#: IPD30N03S2L-10

OMO.#: OMO-IPD30N03S2L-10

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-20

Mfr.#: IPD30N03S2L-20

OMO.#: OMO-IPD30N03S2L-20

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S4L09ATMA1

Mfr.#: IPD30N03S4L09ATMA1

OMO.#: OMO-IPD30N03S4L09ATMA1

MOSFET N-CHANNEL_30/40V
IPD30N03S2L-07

Mfr.#: IPD30N03S2L-07

OMO.#: OMO-IPD30N03S2L-07-1190

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-08

Mfr.#: IPD30N03S2L-08

OMO.#: OMO-IPD30N03S2L-08-1190

신규 및 오리지널
IPD30N03S2L-10

Mfr.#: IPD30N03S2L-10

OMO.#: OMO-IPD30N03S2L-10-1190

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-10G

Mfr.#: IPD30N03S2L-10G

OMO.#: OMO-IPD30N03S2L-10G-1190

신규 및 오리지널
IPD30N03S2L-13

Mfr.#: IPD30N03S2L-13

OMO.#: OMO-IPD30N03S2L-13-1190

신규 및 오리지널
IPD30N03S4L-09

Mfr.#: IPD30N03S4L-09

OMO.#: OMO-IPD30N03S4L-09-1190

MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2
유효성
재고:
Available
주문 시:
5500
수량 입력:
IPD30N03S4L14ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
시작
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