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FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1
Mfr. #:
FF11MR12W1M1B11BOMA1
제조사:
Infineon Technologies
설명:
Discrete Semiconductor Modules
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FF11MR12W1M1B11BOMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FF11MR12W1M1B11BOMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
이산 반도체 모듈
RoHS:
Y
제품:
전력 MOSFET 모듈
유형:
EasyDUAL 모듈
Vf - 순방향 전압:
4 V
Vgs - 게이트 소스 전압:
- 10 V, 20 V
장착 스타일:
프레스핏
패키지/케이스:
기준 치수
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
포장:
쟁반
구성:
듀얼
상표:
인피니언 테크놀로지스
트랜지스터 극성:
N-채널
가을 시간:
28 ns
Id - 연속 드레인 전류:
100 A
작동 공급 전압:
-
Pd - 전력 손실:
20 mW
상품 유형:
이산 반도체 모듈
Rds On - 드레인 소스 저항:
11 mOhms
상승 시간:
16.5 ns
공장 팩 수량:
24
하위 카테고리:
이산 반도체 모듈
상표명:
쿨식
일반적인 끄기 지연 시간:
64.5 ns
일반적인 켜기 지연 시간:
25 ns
Vds - 드레인 소스 항복 전압:
1200 V
Vgs th - 게이트 소스 임계 전압:
3.5 V
부품 번호 별칭:
FF11MR12W1M1_B11 SP001602204
Tags
FF11, FF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET MODULE, N-CH, 1.2KV, 100A; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltag; Available until stocks are exhausted
***ark
Mosfet Mod, N-Ch, 1.2Kv, 100A, 0.02W; Mosfet Module Configuration:Half Bridge; Channel Type:Dual N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:22Pins; Rds(On) Test Voltage:- Rohs Compliant: Yes |Infineon FF11MR12W1M1B11BOMA1
***ineon
EasyDUAL 1B 1200 V / 23 m halfbridge module with CoolSiC MOSFET, NTC and PressFIT Contact Technology | Summary of Features: High current density; Best in class switching and conduction losses; Low inductive design; Integrated NTC temperature sensor; PressFIT contact technology; RoHS-compliant modules | Benefits: Highest efficiency for reduced cooling effort; Higher frequency operation; Increased power density; Optimized customers development cycle time and cost | Target Applications: drives; solar; ups; battery-charger
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
부분 # 제조 설명 재고 가격
FF11MR12W1M1B11BOMA1
DISTI # V99:2348_18204869		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1-ND		Infineon Technologies AGMOSFET 2 N-CH 1200V 100A MODULE
RoHS: Compliant
Min Qty: 1
Container: Tray		20In Stock
  • 1:$155.8300
FF11MR12W1M1B11BOMA1
DISTI # 32441266		Infineon Technologies AGLOW POWER EASY41
  • 1:$187.1699
FF11MR12W1M1B11BOMA1
DISTI # 32371310		Infineon Technologies AGLOW POWER EASY16
  • 1:$229.2812
FF11MR12W1M1B11BOMA1
DISTI # SP001602204		Infineon Technologies AGLOW POWER EASY (Alt: SP001602204)
RoHS: Compliant
Min Qty: 1		Europe - 43
  • 1000:€131.2900
  • 500:€133.1900
  • 100:€134.6900
  • 50:€137.0900
  • 25:€144.2900
  • 10:€145.8900
  • 1:€150.3900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FF11MR12W1M1B11BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray		Americas - 0
  • 240:$132.1900
  • 144:$135.3900
  • 96:$138.8900
  • 48:$142.4900
  • 24:$144.2900
FF11MR12W1M1B11BOMA1
DISTI # FF11MR12W1M1_B11		Infineon Technologies AGLOW POWER EASY (Alt: FF11MR12W1M1_B11)
RoHS: Not Compliant
Min Qty: 24		Asia - 0
    FF11MR12W1M1B11BOMA1
    DISTI # 24AC8569    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes14
    • 25:$150.7900
    • 10:$152.9300
    • 5:$156.8300
    • 1:$160.7000
    FF11MR12W1M1B11BOMA1
    DISTI # 726-FF11MR12W1M1B11    		Infineon Technologies AGDiscrete Semiconductor Modules
    RoHS: Compliant    		0
    • 1:$159.1100
    • 5:$155.2800
    • 10:$151.4200
    • 25:$149.3000
    FF11MR12W1M1B11BOMA1Infineon Technologies AGFF11MR12W1M1_B11 1200 V 100A EasyDUAL Module with CoolSiC Mosfet / PressFIT/NTC
    RoHS: Compliant    		24Tray
    • 1:$155.2800
    • 2:$148.3900
    • 5:$139.7500
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A9
    • 10:£109.0000
    • 5:£113.0000
    • 1:£116.0000
    FF11MR12W1M1B11BOMA1
    DISTI # XSFP00000171367    		Infineon Technologies AG 
    RoHS: Compliant    		19 in Stock0 on Order
    • 19:$207.0400
    • 1:$221.8300
    FF11MR12W1M1B11BOMA1
    DISTI # XSKDRABV0048485    		Infineon Technologies AG 
    RoHS: Compliant    		25 in Stock0 on Order
    • 25:$196.2700
    • 24:$210.2800
    FF11MR12W1M1B11BOMA1
    DISTI # 2771412    		Infineon Technologies AGMOSFET MODULE, N-CH, 1.2KV, 100A
    RoHS: Compliant    		9
    • 1:$237.7900
    영상 부분 # 설명
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1

    		 Discrete Semiconductor Modules
    FF11MR12W1M1B11BOMA1

    Mfr.#: FF11MR12W1M1B11BOMA1

    OMO.#: OMO-FF11MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

    		 MOSFET 2 N-CH 1200V 100A MODULE
    유효성
    재고:
    Available
    주문 시:
    1000
    수량 입력:
    FF11MR12W1M1B11BOMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$159.11
    US$159.11
    5
    US$155.28
    US$776.40
    10
    US$151.42
    US$1 514.20
    25
    US$149.30
    US$3 732.50
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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