CGHV1J025D-GP4

Mfr. #:: CGHV1J025D-GP4
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV1J025D-GP4 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGHV1J025D-GP4 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 20 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 50 V

Vgs - 게이트 소스 항복 전압:: 145 V

Id - 연속 드레인 전류:: 2.5 A

출력 파워:: 70 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 64 W

장착 스타일:: 나사산

패키지/케이스:: NI-360

포장:: 쟁반

구성:: 하나의

동작 주파수:: 3.7 GHz

작동 온도 범위:: - 40 C to + 85 C

시리즈:: QPD

상표:: 코르보

개발 키트:: QPD1015LPCB401

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 25

하위 카테고리:: 트랜지스터

Vgs th - 게이트 소스 임계 전압:: - 2.8 V

Tags: CGHV1J02, CGHV1J, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1J025D-GP4 설명

***i-Key: RF MOSFET HEMT 40V DIE

***hardson RFPD: RF POWER TRANSISTOR

CGHV1J025D-GP4 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

부분 #	제조	설명	재고	가격
CGHV1J025D-GP4 DISTI # V36:1790_22799863	Cree, Inc.	RF POWER TRANSISTOR	0	25000:$46.5200 5000:$48.2700 500:$52.3800 50:$53.1400
CGHV1J025D-GP4 DISTI # CGHV1J025D-GP4-ND	Wolfspeed	RF MOSFET HEMT 40V DIE RoHS: Compliant Min Qty: 10 Container: Tray	120In Stock	10:$41.7200
CGHV1J025D-GP4 DISTI # 941-CGHV1J025D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt RoHS: Compliant	0	10:$46.8100
CGHV1J025D-GP4 DISTI # CGHV1J025D-GP4	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	50:$42.6500

관련 상품

영상	부분 #	설명
	Mfr.#: CMPA1D1E025F OMO.#: OMO-CMPA1D1E025F	RF Amplifier GaN MMIC Power Amp 13.75-14.5GHz 25Watt
	Mfr.#: CGHV1J070D-GP4 OMO.#: OMO-CGHV1J070D-GP4	RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
	Mfr.#: CGHV1J006D-GP4 OMO.#: OMO-CGHV1J006D-GP4	RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
	Mfr.#: CGHV1J006D-GP4 OMO.#: OMO-CGHV1J006D-GP4-WOLFSPEED	RF MOSFET HEMT 40V DIE
	Mfr.#: CGHV1J070D-GP4 OMO.#: OMO-CGHV1J070D-GP4-WOLFSPEED	RF POWER TRANSISTOR
	Mfr.#: CMPA1D1E025F OMO.#: OMO-CMPA1D1E025F-WOLFSPEED	IC AMP 13.75GHZ-14.5GHZ 440208