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IXDN55N120D1

IXDN55N120D1
Mfr. #:
IXDN55N120D1
제조사:
Littelfuse
설명:
IGBT Transistors 55 Amps 1200V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXDN55N120D1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXDN55N120D1 DatasheetIXDN55N120D1 Datasheet (P4)
ECAD Model:
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
SOT-227B-4
장착 스타일:
SMD/SMT
구성:
단일 이중 이미터
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.3 V
최대 게이트 이미터 전압:
20 V
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
시리즈:
IXDN55N120
포장:
튜브
연속 수집가 현재 IC 최대:
100 A
키:
9.6 mm
길이:
38.23 mm
너비:
25.42 mm
상표:
익시스
지속적인 수집가 전류:
100 A
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
10
하위 카테고리:
IGBT
단위 무게:
1.058219 oz
Tags
IXDN55N120D, IXDN55, IXDN5, IXDN, IXD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***v
    S***v
    RU

    Thank you!

    2019-04-20
    D***n
    D***n
    TR

    Nice product for you

    2019-02-08
***ure Electronics
IXDN Series 1200 Vce 100 A 100 ns t(on) High Voltage IGBT - SOT-227B
***ark
Igbt, N-Ch, 1.2Kv, 100A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):2.3V; Power Dissipation Pd:450W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 100 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.8 / Emitter Leakage Current nA = 500 / Power Dissipation (Pd) W = 450 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD
부분 # 제조 설명 재고 가격
IXDN55N120D1
DISTI # IXDN55N120D1-ND		IXYS CorporationIGBT 1200V 100A W/DIODE SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 250:$22.2575
  • 100:$24.2530
  • 30:$26.0950
  • 10:$28.3980
  • 1:$30.7000
IXDN55N120D1
DISTI # 02AC9794		IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:450W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case , RoHS Compliant: Yes2
  • 1:$33.7700
  • 5:$32.0900
  • 10:$31.2400
  • 25:$28.7100
  • 50:$28.0200
  • 100:$26.6800
  • 250:$24.4900
IXDN55N120D1
DISTI # 747-IXDN55N120D1		IXYS CorporationIGBT Transistors 55 Amps 1200V
RoHS: Compliant		0
  • 1:$30.7000
  • 5:$29.1700
  • 10:$28.4000
  • 25:$26.1000
  • 50:$25.4700
  • 100:$24.2500
  • 200:$22.2600
IXDN55N120D1
DISTI # IXDN55N120D1		IXYS Corporation1200V 100A 450W SOT227B
RoHS: Compliant		28
  • 1:€24.7000
  • 5:€20.7000
  • 10:€18.7000
  • 25:€18.0000
IXDN55N120D1
DISTI # 2674741		IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant		2
  • 1:£24.3900
  • 5:£23.1600
  • 10:£20.7400
  • 50:£20.2300
  • 100:£17.6800
IXDN55N120D1
DISTI # 2674741		IXYS CorporationIGBT, N-CH, 1.2KV, 100A, SOT-227B
RoHS: Compliant		2
  • 1:$48.5800
  • 10:$44.9400
  • 30:$41.3000
  • 100:$38.3800
  • 250:$35.2200
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유효성
재고:
370
주문 시:
2353
수량 입력:
IXDN55N120D1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$30.70
US$30.70
5
US$29.17
US$145.85
10
US$28.39
US$283.90
25
US$26.09
US$652.25
50
US$25.47
US$1 273.50
100
US$24.25
US$2 425.00
200
US$22.25
US$4 450.00
500
US$21.19
US$10 595.00
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