MRFE6VP6300HSR5

Mfr. #:: MRFE6VP6300HSR5
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors VHV6 300W50VISM NI780S-4
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRFE6VP6300HSR5 데이터 시트
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ECAD Model:
추가 정보:: MRFE6VP6300HSR5 추가 정보

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 130 V

얻다:: 26.6 dB

출력 파워:: 300 W

최소 작동 온도:: - 30 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: NI-780S-4

포장:: 릴

구성:: 하나의

동작 주파수:: 1.8 MHz to 600 MHz

시리즈:: MRFE6VP6300

유형:: RF 전력 MOSFET

상표:: NXP / 프리스케일

Pd - 전력 손실:: 1.05 kW

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: 10 V

Vgs th - 게이트 소스 임계 전압:: 2.2 V

부품 번호 별칭:: 935314385178

단위 무게:: 0.161213 oz

Tags: MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP6300HSR5 설명

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

***et: LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30

***ical: Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R

***et Europe: Trans MOSFET N-CH 130V 4-Pin NI-780S T/R

***hardson RFPD: RF POWER TRANSISTOR LDMOS

***i-Key: FET RF 2CH 130V 230MHZ NI780S-4

***ark: RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes

MRFE6VP6300HSR5 추가 정보

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

부분 #	제조	설명	재고	가격
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5-ND	NXP Semiconductors	FET RF 2CH 130V 230MHZ NI780S-4 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Temporarily Out of Stock	50:$95.5168
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5	Avnet, Inc.	Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$97.2900 100:$93.4900 200:$89.7900 300:$86.5900 500:$84.8900
MRFE6VP6300HSR5 DISTI # 13T4415	NXP Semiconductors	RF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes	0	1:$111.5100 10:$105.5200 25:$100.1400 50:$96.8000 100:$88.8200 250:$86.1900 500:$83.4900
MRFE6VP6300HSR5 DISTI # 841-MRFE6VP6300HSR5	NXP Semiconductors	RF MOSFET Transistors VHV6 300W50VISM NI780S-4 RoHS: Compliant	0	50:$95.5200
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	25	1:$111.6900 10:$103.2200 25:$100.1900

관련 상품

영상	부분 #	설명
	Mfr.#: MRFE6VP5150GNR1 OMO.#: OMO-MRFE6VP5150GNR1	RF MOSFET Transistors 1.8--600 MHz 150 W CW 50 V
	Mfr.#: MRFE6VP100HSR5 OMO.#: OMO-MRFE6VP100HSR5	RF MOSFET Transistors VHV6 100W 50V ISM
	Mfr.#: MRFE6VP6300HSR3 OMO.#: OMO-MRFE6VP6300HSR3	RF MOSFET Transistors VHV6 300W50VISM NI780S-4
	Mfr.#: MRFE6VP61K25HSR6 OMO.#: OMO-MRFE6VP61K25HSR6-NXP-SEMICONDUCTORS	FET RF 2CH 133V 230MHZ NI-1230S
	Mfr.#: MRFE6VP5600HR OMO.#: OMO-MRFE6VP5600HR-1190	신규 및 오리지널
	Mfr.#: MRFE6VP61K25H OMO.#: OMO-MRFE6VP61K25H-1190	신규 및 오리지널
	Mfr.#: MRFE6VP5150GNR1 OMO.#: OMO-MRFE6VP5150GNR1-NXP-SEMICONDUCTORS	FET RF 2CH 133V 230MHZ TO-270 GW
	Mfr.#: MRFE6VP8600HSR5 OMO.#: OMO-MRFE6VP8600HSR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 600W NI1230S 50V
	Mfr.#: MRFE6VP61K25HR5 OMO.#: OMO-MRFE6VP61K25HR5-NXP-SEMICONDUCTORS	FET RF 2CH 133V 230MHZ NI-1230
	Mfr.#: MRFE6VP6300HR5 OMO.#: OMO-MRFE6VP6300HR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 300W50VISM NI780H-4

유효성

재고:: Available
주문 시:: 1000
수량 입력:

MRFE6VP6300HSR5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

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MRFE6VP6300HSR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes