TGF2023-2-10

TGF2023-2-10
Mfr. #:
TGF2023-2-10
제조사:
Qorvo
설명:
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2023-2-10 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2023-2-10 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
TGF
포장
젤팩
부분 별칭
1099951
패키지 케이스
주사위
기술
GaN SiC
트랜지스터형
헴트
트랜지스터 극성
N-채널
Tags
TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
부분 # 제조 설명 재고 가격
TGF2023-2-10
DISTI # 772-TGF2023-2-10
QorvoRF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
RoHS: Compliant
0
  • 50:$71.5800
  • 100:$63.2500
1099951
DISTI # TGF2023-2-10
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$59.3200
영상 부분 # 설명
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-12

Mfr.#: TGF2021-12

OMO.#: OMO-TGF2021-12-318

RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)
TGF2023-2-10

Mfr.#: TGF2023-2-10

OMO.#: OMO-TGF2023-2-10-318

RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
TGF2021-02

Mfr.#: TGF2021-02

OMO.#: OMO-TGF2021-02-318

RF JFET Transistors DC-12GHz 2mm Pwr pHEMT (0.35um)
TGF2021-04-SD

Mfr.#: TGF2021-04-SD

OMO.#: OMO-TGF2021-04-SD-1190

신규 및 오리지널
TGF2021-04SD

Mfr.#: TGF2021-04SD

OMO.#: OMO-TGF2021-04SD-1190

신규 및 오리지널
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

신규 및 오리지널
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
TGF2023-2-0150PCS

Mfr.#: TGF2023-2-0150PCS

OMO.#: OMO-TGF2023-2-0150PCS-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
2000
수량 입력:
TGF2023-2-10의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$94.88
US$94.88
10
US$90.13
US$901.31
100
US$85.39
US$8 538.75
500
US$80.64
US$40 321.90
1000
US$75.90
US$75 900.00
시작
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