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MRFE6VP8600HSR5

MRFE6VP8600HSR5
Mfr. #:
MRFE6VP8600HSR5
제조사:
NXP / Freescale
설명:
RF MOSFET Transistors VHV6 600W NI1230S 50V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MRFE6VP8600HSR5 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
NXP
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
N-채널
기술:
시
Vds - 드레인 소스 항복 전압:
140 V
얻다:
18.8 dB
출력 파워:
600 W
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
NI-1230S
포장:
릴
구성:
듀얼
동작 주파수:
470 MHz to 860 MHz
시리즈:
MRFE6VP8600H
유형:
RF 전력 MOSFET
상표:
NXP / 프리스케일
순방향 트랜스컨덕턴스 - 최소:
15.6 S
Pd - 전력 손실:
1.52 kW
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
50
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
10 V
Vgs th - 게이트 소스 임계 전압:
2.07 V
부품 번호 별칭:
935310858178
단위 무게:
0.467870 oz
Tags
MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1829
***ical
Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R
***ark
Rf Fet, 130V, 1.052Kw, Ni-1230S Rohs Compliant: Yes
*** Electronic Components
RF MOSFET Transistors VHV6 600W NI1230S 50V
***el Electronic
LED DRVR 3Segment 3.3V/5V 14-Pin TSSOP T/R
***i-Key
FET RF 2CH 130V 860MHZ NI1230S
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
*** Stop Electro
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ark
Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes
***W
RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787
***-Wing Technology
Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz
***ure Electronics
MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230
***nell
TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS
***ark
RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
부분 # 제조 설명 재고 가격
MRFE6VP8600HSR5
DISTI # 25967845		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R309
  • 1:$252.0000
MRFE6VP8600HSR5
DISTI # MRFE6VP8600HSR5TR-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI1230S
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$253.8838
MRFE6VP8600HSR5
DISTI # MRFE6VP8600HSR5		Avnet, Inc.VHV6 600W 50V NI1230S - Tape and Reel (Alt: MRFE6VP8600HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$278.1900
  • 100:$267.2900
  • 200:$256.8900
  • 300:$247.4900
  • 500:$242.7900
MRFE6VP8600HSR5
DISTI # 841-MRFE6VP8600HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 600W NI1230S 50V
RoHS: Compliant		36
  • 1:$279.2100
  • 5:$272.9800
  • 10:$267.3900
  • 25:$263.4500
  • 50:$253.8800
MRFE6VP8600HSR5
DISTI # MRFE6VP8600HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		22
  • 1:$263.1200
  • 10:$256.1900
  • 25:$252.8700
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Mfr.#: UCC27712DR

OMO.#: OMO-UCC27712DR

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SLD8S16A

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OMO.#: OMO-TPS7A8801RTJR

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OMO.#: OMO-DRV5032AJDBZR

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DRV5032AJDBZR

Mfr.#: DRV5032AJDBZR

OMO.#: OMO-DRV5032AJDBZR-TEXAS-INSTRUMENTS

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Mfr.#: SLD8S30A

OMO.#: OMO-SLD8S30A-LITTELFUSE

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TPME226K050R0075

Mfr.#: TPME226K050R0075

OMO.#: OMO-TPME226K050R0075-AVX

 Tantalum Capacitors - Solid SMD 50volts 22uF ESR=75
TPS7A8801RTJR

Mfr.#: TPS7A8801RTJR

OMO.#: OMO-TPS7A8801RTJR-TEXAS-INSTRUMENTS

 LDO Voltage Regulators Dual 1A LDO
유효성
재고:
17
주문 시:
2000
수량 입력:
MRFE6VP8600HSR5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$279.21
US$279.21
5
US$272.98
US$1 364.90
10
US$267.39
US$2 673.90
25
US$263.45
US$6 586.25
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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