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GS66502B-E01-MR

GS66502B-E01-MR
Mfr. #:
GS66502B-E01-MR
제조사:
GaN Systems
설명:
MOSFET 650V Enhancement Mode Transisto
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
GS66502B-E01-MR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
GS66502B-E01-MR 추가 정보
제품 속성
속성 값
제조사
GaN 시스템
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
릴
장착 스타일
SMD/SMT
기술
GaN
채널 수
1 Channel
구성
하나의
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
Vgs 게이트 소스 전압
10 V
Id-연속-드레인-전류
7.5 A
Vds-드레인-소스-고장-전압
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
560 mOhms
트랜지스터 극성
N-채널
Qg-Gate-Charge
1.7 nC
채널 모드
상승
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS66502B 650V GaN Transistor
GaN Systems GS66502B 650V GaN Transistor is an enhancement mode GaN-on-silicon power transistor. This transistor is based on Island Technology® cell layout for high-current die performance and yield. The GS66502B transistor features 650V enhancement mode power switch, easy gate drive requirements, and low inductance GaNPX™ package. This GaN transistor is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. The GS66502B is compliant with RoHS 6 and also features reverse current capability and zero reverse recovery loss. Typical applications include high efficiency / density power conversion, AC-DC converters, half bridge topologies, fast battery charging, and small-medium UPS.
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
부분 # 제조 설명 재고 가격
GS66502B-E01-MR
DISTI # 499-GS66502B-E01-MR		GaN SystemsMOSFET 650V Enhancement Mode Transistor
RoHS: Compliant		1533
  • 1:$9.3500
  • 10:$9.0500
  • 25:$8.6300
  • 250:$8.0000
  • 1000:$7.7800
GS66502B-E01-MR
DISTI # GS66502B-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		750
  • 250:$7.6900
영상 부분 # 설명
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

 MOSFET 650V Enhancement Mode Transistor
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

 MOSFET 650V Enhancement Mode Transisto
유효성
재고:
Available
주문 시:
1000
수량 입력:
GS66502B-E01-MR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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