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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTG10N120BND DISTI # 32727600 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 25200 |
|
| HGTG10N120BND DISTI # 31229239 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 476 |
|
| HGTG10N120BND DISTI # HGTG10N120BND-ND | ON Semiconductor | IGBT 1200V 35A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 807In Stock |
|
| HGTG10N120BND DISTI # V36:1790_06359369 | ON Semiconductor | NPTPIGBT TO247 35A 1200V | 0 | |
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 | Asia - 0 |
|
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND) RoHS: Compliant Min Qty: 450 Container: Tube | Americas - 0 |
|
| HGTG10N120BND DISTI # 98B1928 | ON Semiconductor | SINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND. DISTI # 16AC0004 | Fairchild Semiconductor Corporation | DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes | 0 |
|
| HGTG10N120BND DISTI # 512-HGTG10N120BND | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 796 |
|
| HGTG10N120BND_Q DISTI # 512-HGTG10N120BND_Q | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Not compliant | 0 | |
| HGTG10N120BND | ON Semiconductor | HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 50Tube |
|
| HGTG10N120BN | Harris Semiconductor | 45 | ||
| HGTG10N120BND | Harris Semiconductor | 20 | ||
| HGTG10N120BND | Harris Semiconductor | 23 | ||
| HGTG10N120BND DISTI # HGTG10N120BND | ON Semiconductor | Transistor: IGBT,1.2kV,17A,298W,TO247-3 | 326 |
|
| HGTG10N120BND | Fairchild Semiconductor Corporation | RoHS: Compliant | Europe - 1130 | |
| HGTG10N120BND DISTI # XSFP00000002029 | Fairchild Semiconductor Corporation | N-Channel 60 V 17.2 A 42 mOhm QFET Mosfet - I-PAK-3 RoHS: Compliant | 1218 in Stock0 on Order |
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| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: HGTG12N60C3D OMO.#: OMO-HGTG12N60C3D |
IGBT Transistors 24a 600V IGBT UFS N-Channel |
|
Mfr.#: HGTG12N60C3D |
IGBT Transistors 24a 600V IGBT UFS N-Channel |
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Mfr.#: HGTG10N120 OMO.#: OMO-HGTG10N120-1190 |
신규 및 오리지널 |
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Mfr.#: HGTG10N120BND 10N120BND |
신규 및 오리지널 |
|
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Mfr.#: HGTG10N120BNS OMO.#: OMO-HGTG10N120BNS-1190 |
신규 및 오리지널 |
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Mfr.#: HGTG11N120CND? OMO.#: OMO-HGTG11N120CND--1190 |
NPTPIGBT TO247 43A 1200V |
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Mfr.#: HGTG12N60A4D-NL OMO.#: OMO-HGTG12N60A4D-NL-1190 |
신규 및 오리지널 |
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Mfr.#: HGTG12N60D1 OMO.#: OMO-HGTG12N60D1-1190 |
신규 및 오리지널 |
|
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Mfr.#: HGTG18N120BN G18N120BN |
신규 및 오리지널 |
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Mfr.#: HGTG12N60C3DR OMO.#: OMO-HGTG12N60C3DR-1190 |
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel |