NTE4151PT1G

Mfr. #:: NTE4151PT1G
제조사:: ON Semiconductor
설명:: MOSFET -20V -760mA P-Channel
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NTE4151PT1G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NTE4151PT1G Datasheet NTE4151PT1G Datasheet (P4-P6)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SC-89-3

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 760 mA

Rds On - 드레인 소스 저항:: 490 mOhms

Vgs - 게이트 소스 전압:: 6 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 313 mW

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 0.7 mm

길이:: 1.6 mm

제품:: MOSFET 소신호

시리즈:: NTE4151P

트랜지스터 유형:: 1 P-Channel

유형:: MOSFET

너비:: 0.85 mm

상표:: 온세미컨덕터

순방향 트랜스컨덕턴스 - 최소:: 0.4 S

가을 시간:: 8.2 ns

상품 유형:: MOSFET

상승 시간:: 8.2 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 29 ns

일반적인 켜기 지연 시간:: 8 ns

단위 무게:: 0.001058 oz

Tags: NTE4151, NTE415, NTE41, NTE4, NTE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTE4151PT1G 평가 및 리뷰

S***n

never receive the goods

2019-07-04

D***v

No order, the money was returned ....Left in the fog all orders from the end of january to february inclusive, as introduced a new delivery.To the seller there are no pritenzy, good luck and prosperity .... i'm waiting for 3 more orders from him...

2019-05-10

NTE4151PT1G 설명

***Semiconductor: Single P-Channel Gate Zener Small Signal MOSFET -20V, -760mA, 360mΩ

***th Star Micro: NTE4151P: Small Signal MOSFET 20V 760mA 360 mOhm Single P-Channel SC-89 with ESD Protection

***ied Electronics & Automation: MOSFET, P-Ch, VDSS -20V, RDS(ON) 0.26Ohm, ID -760mA, SC-89, PD 313mW, VGS +/-6V

***ure Electronics: Single P-Channel 20 V 1 Ohm 2.1 nC 313 mW Silicon SMT Mosfet - SC-89-3

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:760Ma; On Resistance Rds(On):0.26Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
NTE4151PT1G DISTI # NTE4151PT1GOSCT-ND	ON Semiconductor	MOSFET P-CH 20V 0.76A SC-89 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8647In Stock	1000:$0.1036 500:$0.1341 100:$0.2258 10:$0.3430 1:$0.4800
NTE4151PT1G DISTI # NTE4151PT1GOSDKR-ND	ON Semiconductor	MOSFET P-CH 20V 0.76A SC-89 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8647In Stock	1000:$0.1036 500:$0.1341 100:$0.2258 10:$0.3430 1:$0.4800
NTE4151PT1G DISTI # NTE4151PT1GOSTR-ND	ON Semiconductor	MOSFET P-CH 20V 0.76A SC-89 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.1006
NTE4151PT1G DISTI # NTE4151PT1G	ON Semiconductor	Trans MOSFET P-CH 20V 0.76A 3-Pin SC-89 T/R - Tape and Reel (Alt: NTE4151PT1G) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0510 6000:$0.0507 12000:$0.0500 18000:$0.0494 30000:$0.0481
NTE4151PT1G DISTI # 10N9572	ON Semiconductor	P CHANNEL MOSFET, -20V, 760mA SC-89,Transistor Polarity:P Channel,Continuous Drain Current Id:-760mA,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.26ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1.2V RoHS Compliant: Yes	0	1000:$0.1090 500:$0.1200 250:$0.1300 100:$0.1410 50:$0.2340 25:$0.3260 1:$0.5120
NTE4151PT1G. DISTI # 28AC0218	ON Semiconductor	Transistor Polarity:P Channel,Continuous Drain Current Id:-760mA,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.26ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1.2V,Power Dissipation Pd:313mW,Product Range:-RoHS Compliant: Yes	0	1:$0.0830 9000:$0.0830
NTE4151PT1G DISTI # 70100694	ON Semiconductor	MOSFET,P-Ch,VDSS -20V,RDS(ON) 0.26Ohm,ID -760mA,SC-89,PD 313mW,VGS +/-6V RoHS: Compliant	0	100:$0.1350 200:$0.1170 250:$0.0970
NTE4151PT1G DISTI # 863-NTE4151PT1G	ON Semiconductor	MOSFET -20V -760mA P-Channel RoHS: Compliant	208	1:$0.5100 10:$0.3240 100:$0.1390 1000:$0.1070 3000:$0.0810
NTE4151PT1G	ON Semiconductor	RoHS: Not Compliant	500000	100:$0.0700 500:$0.0700 1000:$0.0700 1:$0.0800 25:$0.0800
NTE4151PT1G DISTI # 7800554P	ON Semiconductor	MOSFET P-CH 20V 760MA SMALL SIGNAL SC89, RL	2200	100:£0.1460 250:£0.1230 500:£0.1000 1000:£0.0770
NTE4151PT1G	ON Semiconductor	760 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	8728	4939:$0.0630 445:$0.0810 1:$0.2250
NTE4151PT1G	ON Semiconductor	760 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	1730	445:$0.0810 57:$0.1125 1:$0.2250
NTE4151PT1G	ON Semiconductor	760 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	3908	418:$0.0800 51:$0.1200 1:$0.4000
NTE4151PT1G	ON Semiconductor		6000
NTE4151PT1G	ON Semiconductor		4885	17:$0.3000 51:$0.1500 335:$0.0900 1668:$0.0600
NTE4151PT1G DISTI # NTE4151PT1G	ON Semiconductor	Transistor: P-MOSFET,unipolar,-20V,-0.76A,313mW,SC89	400	5:$0.1276 25:$0.1048 100:$0.0842 500:$0.0757 3000:$0.0706
NTE4151PT1G	Chip 1 Exchange	INSTOCK	8180
NTE4151PT1G	Chip 1 Exchange	INSTOCK	9236
NTE4151PT1G	Chip 1 Exchange		571
NTE4151PT1G	Chip 1 Exchange		4069
NTE4151PT1G DISTI # 2845376	ON Semiconductor	MOSFET, P-CH, -20V, -0.76A, SC-89 RoHS: Compliant	0	500:£0.1030 250:£0.1060 100:£0.1110 25:£0.2690 5:£0.2810
NTE4151PT1G DISTI # 2845376	ON Semiconductor	MOSFET, P-CH, -20V, -0.76A, SC-89 RoHS: Compliant	0	5000:$0.1110 1000:$0.1170 500:$0.1370 250:$0.1710 100:$0.2250 25:$0.4210 5:$0.5260

영상	부분 #	설명
	Mfr.#: BSS138LT1G OMO.#: OMO-BSS138LT1G	MOSFET 50V 200mA N-Channel
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NTE4151PT1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

S***n

D***v

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes