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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 39In Stock |
|
| IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 39In Stock |
|
| IPD65R250E6XTMA1 DISTI # IPD65R250E6XTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | On Order |
|
| IPD65R250E6 DISTI # SP000898656 | Infineon Technologies AG | MOSFET N-Ch 700V 16.1A DPAK-2 (Alt: SP000898656) RoHS: Compliant Min Qty: 2500 | Europe - 0 |
|
| IPD65R250E6XT DISTI # IPD65R250E6XTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD65R250E6=FS1 DISTI # IPD65R250E6 | Infineon Technologies AG | Trans MOSFET N-CH 700V 16.1A 3-Pin TO-252 T/R (Alt: IPD65R250E6) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| IPD65R250E6XTMA1 DISTI # 13AC9048 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.23ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 0 |
|
| IPD65R250E6XTMA1 DISTI # 726-IPD65R250E6XTMA1 | Infineon Technologies AG | MOSFET N-Ch 700V 16.1A DPAK-2 RoHS: Compliant | 47 |
|
| IPD65R250E6 DISTI # 726-IPD65R250E6 | Infineon Technologies AG | MOSFET N-Ch 700V 16.1A DPAK-2 RoHS: Compliant | 0 |
|
| IPD65R250E6 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 2190 |
|
| IPD65R250E6XTMA1 DISTI # 2726055 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant | 0 |
|
| IPD65R250E6 | Infineon Technologies AG | 650V,250m,16.1A,N-Channel Power MOSFET | 40 |
|
| IPD65R250E6XTMA1 DISTI # 2726055 | Infineon Technologies AG | MOSFET, N-CH, 650V, 16.1A, TO-252-3 RoHS: Compliant | 76 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPD65R950C6 OMO.#: OMO-IPD65R950C6 |
MOSFET N-Ch 700V 4.5A DPAK-2 |
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Mfr.#: IPD65R950CFDATMA1 OMO.#: OMO-IPD65R950CFDATMA1 |
MOSFET LOW POWER_LEGACY |
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Mfr.#: IPD65R1K4C6ATMA1 OMO.#: OMO-IPD65R1K4C6ATMA1 |
MOSFET N-Ch 700V 3.2A DPAK-2 |
|
Mfr.#: IPD65R420CFDAATMA1 |
MOSFET N-CH TO252-3 |
|
Mfr.#: IPD65R950CFDATMA2 |
LOW POWER_LEGACY |
|
|
Mfr.#: IPD65R660CFDATMA2 OMO.#: OMO-IPD65R660CFDATMA2-1190 |
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve |
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Mfr.#: IPD65R1K4C6 OMO.#: OMO-IPD65R1K4C6-1190 |
MOSFET N-Ch 700V 3.2A DPAK-2 |
|
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Mfr.#: IPD65R250C6S OMO.#: OMO-IPD65R250C6S-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPD65R950C6 OMO.#: OMO-IPD65R950C6-1190 |
MOSFET N-Ch 700V 4.5A DPAK-2 |
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Mfr.#: IPD65R950CFDBTMA1 |
RF Bipolar Transistors MOSFET N-Ch 700V 3.9A DPAK-2 |
