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SIDR680DP-T1-GE3

SIDR680DP-T1-GE3
Mfr. #:
SIDR680DP-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIDR680DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR680DP-T1-GE3 DatasheetSIDR680DP-T1-GE3 Datasheet (P4-P6)SIDR680DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIDR680DP-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-SO-8DC-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
80 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
3.4 mOhms
Vgs th - 게이트 소스 임계 전압:
2 V
Vgs - 게이트 소스 전압:
7.5 V
Qg - 게이트 차지:
69.5 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET
포장:
릴
시리즈:
SID
트랜지스터 유형:
1 N-Channel
상표:
비쉐이 / 실리콘닉스
가을 시간:
12 ns
상품 유형:
MOSFET
상승 시간:
25 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
28 ns
일반적인 켜기 지연 시간:
19 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
부분 # 제조 설명 재고 가격
SIDR680DP-T1-GE3
DISTI # V72:2272_21764827		Vishay IntertechnologiesSIDR680DP-T1-GE30
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 6000:$1.3041
    • 3000:$1.3204
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3000In Stock
    • 1000:$1.4608
    • 500:$1.7630
    • 100:$2.1458
    • 10:$2.6700
    • 1:$2.9700
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3000In Stock
    • 1000:$1.4608
    • 500:$1.7630
    • 100:$2.1458
    • 10:$2.6700
    • 1:$2.9700
    SIDR680DP-T1-GE3
    DISTI # 59AC7341    		Vishay IntertechnologiesN-CHANNEL 80-V (D-S) MOSFET0
    • 10000:$1.1700
    • 6000:$1.2100
    • 4000:$1.2600
    • 2000:$1.4000
    • 1000:$1.4800
    • 1:$1.5700
    SIDR680DP-T1-GE3
    DISTI # 78AC6506    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
    • 500:$1.6500
    • 250:$1.7600
    • 100:$1.8800
    • 50:$2.0600
    • 25:$2.2400
    • 10:$2.4200
    • 1:$2.9200
    SIDR680DP-T1-GE3
    DISTI # 78-SIDR680DP-T1-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		7112
    • 1:$2.8900
    • 10:$2.4000
    • 100:$1.8600
    • 500:$1.6300
    • 1000:$1.3500
    • 3000:$1.2500
    • 6000:$1.2100
    SIDR680DP-T1-GE3
    DISTI # 2932901    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W0
    • 500:£1.2000
    • 250:£1.2900
    • 100:£1.3700
    • 10:£1.7700
    • 1:£2.3900
    SIDR680DP-T1-GE3
    DISTI # 2932901    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$2.3800
    • 500:$2.5200
    • 250:$2.6700
    • 100:$2.9100
    • 10:$3.3500
    • 1:$3.8500
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    유효성
    재고:
    Available
    주문 시:
    1990
    수량 입력:
    SIDR680DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.89
    US$2.89
    10
    US$2.40
    US$24.00
    100
    US$1.86
    US$186.00
    500
    US$1.63
    US$815.00
    1000
    US$1.35
    US$1 350.00
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