IRF7831TRPBF

Mfr. #:: IRF7831TRPBF
제조사:: Infineon Technologies
설명:: MOSFET N-CH 30V 21A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF7831TRPBF 데이터 시트
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ECAD Model:
추가 정보:: IRF7831TRPBF 추가 정보

제품 속성
속성 값

제조사: 10IR

제품 카테고리: FET - 단일

포장: 릴

단위 무게: 0.019048 oz

장착 스타일: SMD/SMT

패키지 케이스: SOIC-8

기술: 시

채널 수: 1 Channel

트랜지스터형: 1 N-Channel

Pd 전력 손실: 2.5 W

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 21 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 4.4 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 40 nC

Tags: IRF7831TRP, IRF7831T, IRF7831, IRF783, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7831TRPBF 설명

***ied Electronics & Automation: MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 3.1 Milliohms; ID 21A; SO-8; PD 2.5W; VGS +/-12V

***ark: MOSFET Transistor, N Channel, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V

***ure Electronics: Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET N-CH 30V 21A 8-Pin SOIC Tube

***p One Stop Japan: Trans MOSFET N-CH 30V 21A 8-Pin SOIC

*** Source Electronics: MOSFET N-CH 30V 21A 8-SOIC

***eco: IC,IRF7831TRPBF,30V SINGLE N-C HANNEL HEXFET PLCC32<NV

***trelec: MOSFET [IR] IRF7831PBF MOSFET

***ukat: N-Ch 30V 21A 2,5W 0,0036R SO8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ment14 APAC: Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:21A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:170A; Row Pitch:6.3mm; SMD Marking:IRF7831PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, LOGIC, SO-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:21A; Corrente di Impulso Idm:170A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:4.05mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.75mm; Marcatura SMD:IRF7831PBF; No. di Transistor:1; Passo Fila:6.3mm; Profondità Esterna:5.2mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:2.35V; Tensione Vgs di Misurazione Rds on:10V

IRF7831TRPBF 추가 정보

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF7831TRPBF DISTI # V72:2272_13890402	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	500:$0.5611 250:$0.6225 100:$0.6294 25:$0.7705 10:$0.7796 1:$0.8826
IRF7831TRPBF DISTI # IRF7831PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3948In Stock	1000:$0.5736 500:$0.7265 100:$0.9369 10:$1.1850 1:$1.3400
IRF7831TRPBF DISTI # IRF7831PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3948In Stock	1000:$0.5736 500:$0.7265 100:$0.9369 10:$1.1850 1:$1.3400
IRF7831TRPBF DISTI # IRF7831PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.5198
IRF7831TRPBF DISTI # 30701816	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	4000	40000:$0.3292 24000:$0.3349 16000:$0.3465 8000:$0.3599 4000:$0.3733
IRF7831TRPBF DISTI # 26648810	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	500:$0.5611 250:$0.6225 100:$0.6294 25:$0.7705 19:$0.7796
IRF7831TRPBF DISTI # IRF7831TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3889 8000:$0.3749 16000:$0.3609 24000:$0.3489 40000:$0.3429
IRF7831TRPBF DISTI # IRF7831TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3257 8000:$0.3167 12000:$0.3081 20000:$0.3000 40000:$0.2961 100000:$0.2923 200000:$0.2886
IRF7831TRPBF-1 DISTI # IRF7831TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF-1) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0
IRF7831TRPBF-1 DISTI # IRF7831TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF-1) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7831TRPBF DISTI # 33AC5089	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 21A, SOIC,N CHANNEL MOSFET, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold RoHS Compliant: Yes	0
IRF7831TRPBF DISTI # 70018969	Infineon Technologies AG	MOSFET,30V,21A,3.6 MOHM,40 NC QG,SO-8 RoHS: Compliant	0	4000:$1.8600 8000:$1.8230 20000:$1.7670 40000:$1.6930 100000:$1.5810
IRF7831TRPBF DISTI # 942-IRF7831TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 21A 3.6mOhm 40nC RoHS: Compliant	8533	1:$1.1900 10:$1.0100 100:$0.7750 500:$0.6850 1000:$0.5400
IRF7831TRPBF	International Rectifier		1247
IRF7831TRPBF	International Rectifier	RoHS: Compliant	Europe - 3118
IRF7831TRPBF DISTI # 1375010	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 21A, SOIC RoHS: Compliant	0	1:$1.8800 10:$1.6000 100:$1.2300 500:$1.0900 1000:$0.8550 4000:$0.7590
IRF7831TRPBF DISTI # 2947033	Infineon Technologies AG	MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W RoHS: Compliant	1086	5:£0.8510 25:£0.7650 100:£0.5870 250:£0.5530 500:£0.5180
IRF7831TRPBF DISTI # C1S322000571118	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4970
IRF7831TRPBF DISTI # C1S322000486430	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	250:$0.6225 100:$0.6294 25:$0.7705 10:$0.7796

관련 상품

영상	부분 #	설명
	Mfr.#: IRF7831TRPBF-CUT TAPE OMO.#: OMO-IRF7831TRPBF-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: IRF7831TR OMO.#: OMO-IRF7831TR-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 21A 8-SOIC
	Mfr.#: IRF7832ZTR OMO.#: OMO-IRF7832ZTR-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 21A 8-SOIC
	Mfr.#: IRF7832ZPBF OMO.#: OMO-IRF7832ZPBF-1190	MOSFET, N, 30V, SO-8
	Mfr.#: IRF7831TRPBF-1 OMO.#: OMO-IRF7831TRPBF-1-1190	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF-1)
	Mfr.#: IRF7831 OMO.#: OMO-IRF7831-1190	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
	Mfr.#: IRF7832TR OMO.#: OMO-IRF7832TR-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 20A 8-SOIC
	Mfr.#: IRF7832TRPBF,IRF7832PBF, OMO.#: OMO-IRF7832TRPBF-IRF7832PBF--1190	신규 및 오리지널
	Mfr.#: IRF7832TRPBF. OMO.#: OMO-IRF7832TRPBF--1190	TRENCH_MOSFETS ROHS COMPLIANT: YES
	Mfr.#: IRF7832ZTRPBF OMO.#: OMO-IRF7832ZTRPBF-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3500
수량 입력:

IRF7831TRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.43~~; ~~US$0.43~~

10: ~~US$0.41~~; ~~US$4.11~~

100: ~~US$0.39~~; ~~US$38.96~~

500: ~~US$0.37~~; ~~US$184.00~~

1000: ~~US$0.35~~; ~~US$346.30~~

시작

IRF7831TRP 4
IRF7831T 5
IRF7831 8
IRF783 26
IRF78 177
IRF7 1262
IRF 8615

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IRF7831TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes