SI4431BDY-T1-E3

Mfr. #:: SI4431BDY-T1-E3
제조사:: Vishay / Siliconix
설명:: MOSFET 30V (D-S) 7.5A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4431BDY-T1-E3 데이터 시트
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HTML Datasheet:: SI4431BDY-T1-E3 Datasheet SI4431BDY-T1-E3 Datasheet (P4-P6)SI4431BDY-T1-E3 Datasheet (P7-P9)
ECAD Model:
추가 정보:: SI4431BDY-T1-E3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 7.5 A

Rds On - 드레인 소스 저항:: 30 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 20 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

시리즈:: SI4

트랜지스터 유형:: 1 P-Channel

너비:: 3.9 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 18 S

가을 시간:: 47 ns

상품 유형:: MOSFET

상승 시간:: 10 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 70 ns

일반적인 켜기 지연 시간:: 10 ns

부품 번호 별칭:: SI4431BDY-E3

단위 무게:: 0.006596 oz

Tags: SI4431BDY-T1-E, SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431BDY-T1-E3 평가 및 리뷰

I***l

I'm very satisfied

2019-05-30

V***n

Corresponds to the description!

2019-02-09

E**i

good quality, quick delivery

2019-01-23

S***n

All good, thank you.

2019-06-13

SI4431BDY-T1-E3 설명

***ied Electronics & Automation: SI4431BDY-T1-E3 P-channel MOSFET Transistor; 5.7 A; 30 V; 8-Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8

***ment14 APAC: MOSFET, N, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.8A; Package / Case:8-SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V

***ark: P Channel Mosfet, 30V, -7.5A, Soic; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: No

SI4431BDY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4431BDY-T1-E3 DISTI # V72:2272_07432075	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R RoHS: Compliant	446	250:$0.5199 100:$0.5215 25:$0.6279 10:$0.6307 1:$0.7215
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15700In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15700In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	15000In Stock	2500:$0.3810
SI4431BDY-T1-E3 DISTI # 30345654	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R RoHS: Compliant	446	250:$0.5199 100:$0.5215 25:$0.6279 24:$0.6307
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 5000	2500:$0.3259 5000:$0.3169 10000:$0.3039 15000:$0.2949 25000:$0.2869
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5799 5000:€0.3949 10000:€0.3399 15000:€0.3139 25000:€0.2919
SI4431BDY-T1-E3 DISTI # SI4431BDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R (Alt: SI4431BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431BDY-T1-E3 DISTI # 06J7725	Vishay Intertechnologies	Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 06J7725) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2400 10:$1.0100 25:$0.9320 50:$0.8530 100:$0.7750 250:$0.7210 500:$0.6670
SI4431BDY-T1-E3 DISTI # 06J7725	Vishay Intertechnologies	P CHANNEL MOSFET, 30V, -7.5A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	388	1:$1.2400 10:$1.0100 25:$0.9320 50:$0.8530 100:$0.7750 250:$0.7210 500:$0.6670
SI4431BDY-T1-E3. DISTI # 26AC3330	Vishay Intertechnologies	FOR NEW DESIGNS USE SI4431CDY-T1-GE3 , ROHS COMPLIANT: NO	5000	1:$0.4100 2500:$0.4030 5000:$0.3950 10000:$0.3900 15000:$0.3890
SI4431BDY-T1-E3 DISTI # 70026219	Vishay Siliconix	SI4431BDY-T1-E3 P-channel MOSFET Transistor,5.7 A,30 V,8-Pin SOIC RoHS: Compliant	0	2500:$0.5000 5000:$0.4800 12500:$0.4700 25000:$0.4500 62500:$0.4300
SI4431BDY-T1-E3 DISTI # 781-SI4431BDY-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	1653	1:$1.0300 10:$0.8420 100:$0.6460 500:$0.5560 1000:$0.4390 2500:$0.4100 5000:$0.3890
SI4431BDY-T1 DISTI # 781-SI4431BDY	Vishay Intertechnologies	MOSFET 30V 7.5A 1.5W RoHS: Not compliant	0
SI4431BDY-T1-E3	Vishay Intertechnologies	Single P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	15000Reel	2500:$0.4800
SI4431BDY-T1-E3	Vishay Intertechnologies		1996
SI4431BDY-T1-E3	Vishay Siliconix		1105
SI4431BDY-T1-E3	Vishay Intertechnologies		863
SI4431BDY-T1-E3	VISHAY SILCONEX	MOSFET Transistor, P-Channel, SO	14	6:$0.8652 1:$1.0815
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET Transistor, P-Channel, SO	501	212:$0.7600 54:$0.9500 1:$1.9000
SI4431BDY-T1-E3	Unknown	MOSFET Transistor, P-Channel, SO	1211	1001:$0.7000 201:$0.8000 1:$2.0000
SI4431BDY-T1-E3	Vishay Siliconix	MOSFET Transistor, P-Channel, SO	39	13:$1.2273 3:$1.6364 1:$2.0455
SI4431BDY-T1-E3		INSTOCK	12359
SI4431BDY-T1-E3	Vishay Intertechnologies	INSTOCK	18165
SI4431BDY-T1-E3	Vishay Intertechnologies	INSTOCK	1620
SI4431BDY-T1-E3	Vishay Intertechnologies	MOSFET 30V (D-S) 7.5A RoHS: Compliant	Americas - 20000
SI4431BDY-T1-E3 DISTI # C1S803600845006	Vishay Intertechnologies	MOSFETs RoHS: Compliant	446	250:$0.5178 100:$0.5195 25:$0.6246 10:$0.6274
SI4431BDY-T1-E3 DISTI # 1612646	Vishay Intertechnologies	MOSFET, P, 8-SOIC RoHS: Compliant	0	1:$1.6300 10:$1.3400 100:$1.0300 500:$0.8800 1000:$0.6960 2500:$0.6490 5000:$0.6160
SI4431BDY-T1-E3 DISTI # XSFP00000090668	Vishay Siliconix	RoHS: Compliant	35333	2500:$0.9600 35333:$0.8727

관련 상품

영상	부분 #	설명
	Mfr.#: BUK98150-55A/CUF OMO.#: OMO-BUK98150-55A-CUF	MOSFET N-channel TrenchMOS logic level FET
	Mfr.#: LTC4100EG#TRPBF OMO.#: OMO-LTC4100EG-TRPBF	Battery Management Smart-Battery Charger with SMBus Interface
	Mfr.#: FDC645N OMO.#: OMO-FDC645N	MOSFET SSOT-6 N-CH
	Mfr.#: MBRS130T3G OMO.#: OMO-MBRS130T3G	Schottky Diodes & Rectifiers 1A 30V
	Mfr.#: IRF3710SPBF OMO.#: OMO-IRF3710SPBF	MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
	Mfr.#: AC0603FR-071K13L OMO.#: OMO-AC0603FR-071K13L	Thick Film Resistors - SMD 1/10W 1.13K ohm 1% AEC-Q200
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3	MOSFET 30 Volt 7.1 Amp 2.0W
	Mfr.#: MKP4F031503F00JSSD OMO.#: OMO-MKP4F031503F00JSSD-800	Film Capacitors .15uF 250 Volts 5%
	Mfr.#: SI4925BDY-T1-E3 OMO.#: OMO-SI4925BDY-T1-E3-VISHAY	신규 및 오리지널
	Mfr.#: AC0603FR-071K13L OMO.#: OMO-AC0603FR-071K13L-YAGEO	Thick Film Resistors - SMD 1/10W 1.13K ohm 1%

유효성

재고:: Available
주문 시:: 1992
수량 입력:

SI4431BDY-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.11~~; ~~US$1.11~~

10: ~~US$0.92~~; ~~US$9.21~~

100: ~~US$0.71~~; ~~US$70.70~~

500: ~~US$0.61~~; ~~US$304.00~~

1000: ~~US$0.48~~; ~~US$479.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI4431BDY-T1-E 5
SI4431BDY-T 6
SI4431BD 8
SI4431B 10
SI4431 34
SI443 128
SI44 574
SI4 2994

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