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IPL60R105P7AUMA1

IPL60R105P7AUMA1
Mfr. #:
IPL60R105P7AUMA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPL60R105P7AUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPL60R105P7AUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
VSON-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
33 A
Rds On - 드레인 소스 저항:
85 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
45 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
137 W
구성:
하나의
채널 모드:
상승
포장:
릴
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
8 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
83 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
IPL60R105P7 SP001657410
Tags
IPL60R10, IPL60R1, IPL60, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 105 mOhm 45 nC CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 33A, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPL60R105P7AUMA1
DISTI # V72:2272_18787584		Infineon Technologies AGHIGH POWER_NEW3060
  • 3000:$2.5930
  • 1000:$2.7759
  • 500:$2.9580
  • 250:$3.3320
  • 100:$3.6440
  • 25:$4.0640
  • 10:$4.2089
  • 1:$5.4417
IPL60R105P7AUMA1
DISTI # V36:1790_18787584		Infineon Technologies AGHIGH POWER_NEW0
  • 3000000:$2.1930
  • 1500000:$2.1950
  • 300000:$2.3450
  • 30000:$2.5890
  • 3000:$2.6290
IPL60R105P7AUMA1
DISTI # IPL60R105P7AUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3472In Stock
  • 1000:$2.8509
  • 500:$3.3804
  • 100:$3.9709
  • 10:$4.8470
  • 1:$5.4000
IPL60R105P7AUMA1
DISTI # IPL60R105P7AUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3472In Stock
  • 1000:$2.8509
  • 500:$3.3804
  • 100:$3.9709
  • 10:$4.8470
  • 1:$5.4000
IPL60R105P7AUMA1
DISTI # IPL60R105P7AUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$2.6295
IPL60R105P7AUMA1
DISTI # 26597089		Infineon Technologies AGHIGH POWER_NEW3060
  • 3:$5.4417
IPL60R105P7AUMA1
DISTI # 33960065		Infineon Technologies AGHIGH POWER_NEW3000
  • 3000:$2.3583
IPL60R105P7AUMA1
DISTI # 33066001		Infineon Technologies AGHIGH POWER_NEW3000
  • 3000:$3.9062
IPL60R105P7AUMA1
DISTI # IPL60R105P7AUMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPL60R105P7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$2.2900
  • 18000:$2.3900
  • 12000:$2.4900
  • 6000:$2.5900
  • 3000:$2.6900
IPL60R105P7AUMA1
DISTI # SP001657410		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001657410)
RoHS: Compliant
Min Qty: 3000		Europe - 0
  • 30000:€1.9900
  • 18000:€2.1900
  • 12000:€2.3900
  • 6000:€2.4900
  • 3000:€2.5900
IPL60R105P7AUMA1
DISTI # 49AC8002		Infineon Technologies AGMOSFET, N-CH, 600V, 33A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes3000
  • 1000:$2.6600
  • 500:$3.1500
  • 250:$3.5100
  • 100:$3.7100
  • 50:$3.9000
  • 25:$4.0800
  • 10:$4.2700
  • 1:$5.0300
IPL60R105P7AUMA1
DISTI # 726-IPL60R105P7AUMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		3256
  • 1:$4.9800
  • 10:$4.2300
  • 100:$3.6700
  • 250:$3.4800
  • 500:$3.1200
  • 1000:$2.6300
  • 3000:$2.5000
IPL60R105P7AUMA1Infineon Technologies AGSingle N-Channel 600 V 105 mOhm 45 nC CoolMOS Power Mosfet - VSON-4
RoHS: Not Compliant		3000Reel
  • 3000:$2.3800
IPL60R105P7AUMA1
DISTI # 2841638		Infineon Technologies AGMOSFET, N-CH, 600V, 33A, VSON
RoHS: Compliant		3000
  • 1000:$3.7700
  • 500:$3.8500
  • 250:$4.0500
  • 100:$4.2900
  • 10:$4.8500
  • 1:$5.1800
IPL60R105P7AUMA1
DISTI # 2841638		Infineon Technologies AGMOSFET, N-CH, 600V, 33A, VSON3020
  • 500:£2.3800
  • 250:£2.6600
  • 100:£2.8000
  • 10:£3.2200
  • 1:£4.2300
IPL60R105P7AUMA1
DISTI # XSFP00000130717		Infineon Technologies AG 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$3.1700
  • 3000:$3.4000
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Mfr.#: TS3480CX33 RFG

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유효성
재고:
Available
주문 시:
1986
수량 입력:
IPL60R105P7AUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$4.98
US$4.98
10
US$4.23
US$42.30
100
US$3.67
US$367.00
250
US$3.48
US$870.00
500
US$3.12
US$1 560.00
1000
US$2.63
US$2 630.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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