SIHG16N50C-E3

SIHG16N50C-E3
Mfr. #:
SIHG16N50C-E3
제조사:
Vishay
설명:
Darlington Transistors MOSFET N-Channel 500V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHG16N50C-E3 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
SIHG16N50C-E3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
시리즈
E
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
250 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
31 ns
상승 시간
156 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
16 A
Vds-드레인-소스-고장-전압
500 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Resistance
380 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
29 nS
일반 켜기 지연 시간
27 nS
Qg-Gate-Charge
68 nC
순방향 트랜스컨덕턴스-최소
3 S
Tags
SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC
***i-Key
MOSFET N-CH 500V 16A TO247AC
***mal
MOSFET N-CHANNEL 500V
***S
new, original packaged
***
N-CHANNEL 500-V
***ment14 APAC
MOSFET,N CH,DIODE,500V,16A,TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.317ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:16A; Power Dissipation Pd:250W; Voltage Vgs Max:30V
SiHx16N50C 500-V N-Channel Power MOSFETs
Vishay Siliconix SiHx16N50C 500-V, 16-A N-channel power MOSFETS feature ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive and an improved gate charge of 68nC. The low on-resistance of the Vishay Siliconix SiHP16N50C (TO-220AB package), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D²PAK), and SiHG16N50C (TO-247AC) MOSFETs translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, PWM half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs, and open-frame power supplies. Gate charges times on-resistance is a low 25.84 Ω-nC. Vishay Siliconix SiHx16N50C N-channel power MOSFETs are produced using Vishay Planar Cell technology that has been tailored to minimize on-state resistance and withstand high energy pulse in the avalanche and commutation modes. The SiHP16N50C, SiHF16N50C, SiHB16N50C, and SiHG16N50C also offer faster switching speeds and reduced switching losses than previous-generation MOSFETs.Learn More
부분 # 제조 설명 재고 가격
SIHG16N50C-E3
DISTI # V36:1790_09219126
Vishay IntertechnologiesTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant
0
  • 500000:$2.2500
  • 250000:$2.2540
  • 50000:$2.8300
  • 5000:$3.9880
  • 500:$4.1900
SIHG16N50C-E3
DISTI # SIHG16N50C-E3-ND
Vishay SiliconixMOSFET N-CH 500V 16A TO-247AC
Min Qty: 1
Container: Tube
476In Stock
  • 2500:$2.1945
  • 500:$2.7390
  • 100:$3.2175
  • 25:$3.7124
  • 10:$3.9270
  • 1:$4.3700
SIHG16N50C-E3
DISTI # SIHG16N50C-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG16N50C-E3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 3000:$2.0900
  • 5000:$2.0900
  • 2000:$2.1900
  • 1000:$2.2900
  • 500:$2.3900
SIHG16N50C-E3
DISTI # SIHG16N50C-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC (Alt: SIHG16N50C-E3)
Min Qty: 1
Europe - 0
    SIHG16N50C-E3
    DISTI # 23T8468
    Vishay IntertechnologiesMOSFET,N CHANNEL,DIODE,500V,16A,TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.317ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes
    RoHS: Compliant
    403
    • 500:$3.1000
    • 100:$3.5300
    • 50:$3.7500
    • 25:$3.9800
    • 10:$4.2100
    • 1:$5.0200
    SIHG16N50C-E3
    DISTI # 781-SIHG16N50C-E3
    Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
    RoHS: Compliant
    498
    • 1:$4.5800
    • 10:$3.8500
    • 100:$3.2500
    • 250:$3.1900
    • 500:$2.8200
    • 1000:$2.5700
    • 2500:$2.3000
    SIHG16N50C-E3
    DISTI # 1858985
    Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,16A,TO-247AC
    RoHS: Compliant
    403
    • 2500:$3.4500
    • 500:$4.3100
    • 100:$5.0600
    • 25:$5.8400
    • 10:$6.1700
    • 1:$6.8700
    SIHG16N50C-E3
    DISTI # 1858985
    Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,16A,TO-247AC
    RoHS: Compliant
    403
    • 1000:£1.5100
    • 500:£1.8800
    • 250:£2.1000
    • 100:£2.1700
    • 10:£2.6300
    • 1:£3.9400
    영상 부분 # 설명
    SIHG16N50C-E3

    Mfr.#: SIHG16N50C-E3

    OMO.#: OMO-SIHG16N50C-E3

    MOSFET 500V Vds 30V Vgs TO-247AC
    SIHG16N50C-E3

    Mfr.#: SIHG16N50C-E3

    OMO.#: OMO-SIHG16N50C-E3-VISHAY

    Darlington Transistors MOSFET N-Channel 500V
    유효성
    재고:
    Available
    주문 시:
    3500
    수량 입력:
    SIHG16N50C-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.14
    US$3.14
    10
    US$2.98
    US$29.78
    100
    US$2.82
    US$282.15
    500
    US$2.66
    US$1 332.40
    1000
    US$2.51
    US$2 508.00
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