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IXYH30N120C3D1

IXYH30N120C3D1
Mfr. #:
IXYH30N120C3D1
제조사:
Littelfuse
설명:
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYH30N120C3D1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH30N120C3D1 DatasheetIXYH30N120C3D1 Datasheet (P4-P6)IXYH30N120C3D1 Datasheet (P7)
ECAD Model:
추가 정보:
IXYH30N120C3D1 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247AD-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
3.7 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
66 A
Pd - 전력 손실:
416 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
IXYH30N120
포장:
튜브
연속 수집가 현재 IC 최대:
66 A
상표:
익시스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
상표명:
XPT
단위 무게:
1.340411 oz
Tags
IXYH30N120C, IXYH30N12, IXYH30N1, IXYH3, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 66 A Flange Mount High-Speed IGBT - TO-247AD
*** Stop Electro
Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ark
1200V Trench IGBT for Generic Industrial Applications, Size 4.2 w/ Diode (Extended Lead), TUBE
***ical
Trans IGBT Chip N-CH 1200V 85A 320000mW 3-Pin(3+Tab) TO-247AD Tube
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 2V @ 15V 30A 85A 320W 153ns
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UD-EP Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AD
***el Electronic
Alarms, Buzzers, and Sirens Transducer, Externally Driven Through Hole 1 (Unlimited) Piezo PC Pins Zero-Peak Signal 0.496Dia 12.60mm 4kHz 0.291 7.40mm AUDIO PIEZO TRANSDUCER 30V TH
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UDPBF Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AC
***(Formerly Allied Electronics)
1200V Trench IGBT For Generic Industrial Applications, Size 4.2 w/Diode
***ment14 APAC
IGBT,N CH,DIODE,1200V,85A,TO-247AC; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:320W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:320W
***i-Key
IGBT 1200V 75A 380W TO247
***ark
Igbt, Single, 1.2Kv, 75A, To-247; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):2.9V; Power Dissipation Pd:380W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
IRGP30B120KD-EP Series 1200 V 30 A N-Channel Motor Control Co-Pack IGBT TO-247AD
***nell
IGBT, W/DIODE, 1200V, 60A, TO247AD; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: IRGP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 60A; Fall Time Max: 75ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 300W; Pulsed Current Icm: 120A; Rise Time: 25ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXYH30N120C3D1
DISTI # IXYH30N120C3D1-ND		IXYS CorporationIGBT 1200V 66A 416W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.5357
IXYH30N120C3D1
DISTI # 747-IXYH30N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
RoHS: Compliant		53
  • 1:$11.6300
  • 10:$10.4700
  • 25:$9.5400
  • 50:$8.7100
  • 100:$8.6100
  • 250:$7.8400
  • 500:$7.2100
  • 1000:$6.2800
IXYH30N120C3D1
DISTI # 8080271P		IXYS CorporationIGBT 1200V 30A XPT GENX3 W/DIODE TO247AD, TU9
  • 10:£7.1500
  • 20:£6.9800
  • 50:£6.8100
  • 250:£5.6600
영상 부분 # 설명
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
유효성
재고:
33
주문 시:
2016
수량 입력:
IXYH30N120C3D1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$11.63
US$11.63
10
US$10.47
US$104.70
25
US$9.54
US$238.50
50
US$8.71
US$435.50
100
US$8.61
US$861.00
250
US$7.84
US$1 960.00
500
US$7.21
US$3 605.00
1000
US$6.28
US$6 280.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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