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SCTH90N65G2V-7

SCTH90N65G2V-7
Mfr. #:
SCTH90N65G2V-7
제조사:
STMicroelectronics
설명:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCTH90N65G2V-7 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCTH90N65G2V-7 추가 정보 SCTH90N65G2V-7 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
SMD/SMT
패키지/케이스:
H2PAK-7
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
90 A
Rds On - 드레인 소스 저항:
26 mOhms
Vgs th - 게이트 소스 임계 전압:
1.9 V
Vgs - 게이트 소스 전압:
10 V to 22 V
Qg - 게이트 차지:
157 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
330 W
구성:
하나의
채널 모드:
상승
포장:
릴
시리즈:
SCTH90N
트랜지스터 유형:
1 N-Channel
상표:
ST마이크로일렉트로닉스
가을 시간:
16 ns
상품 유형:
MOSFET
상승 시간:
38 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
58 ns
일반적인 켜기 지연 시간:
26 ns
Tags
SCTH, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
부분 # 제조 설명 재고 가격
SCTH90N65G2V-7
DISTI # V36:1790_18695152		STMicroelectronicsSCTH90N65G2V-70
  • 1000000:$35.1100
  • 500000:$35.1200
  • 100000:$39.3700
  • 10000:$50.6500
  • 1000:$52.8000
SCTH90N65G2V-7
DISTI # 497-18352-1-ND		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SCTH90N65G2V-7
    DISTI # 497-18352-6-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SCTH90N65G2V-7
      DISTI # 497-18352-2-ND      		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
      RoHS: Compliant
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
        SCTH90N65G2V-7
        DISTI # SCTH90N65G2V-7        		STMicroelectronicsMOSFET 90A, 650V, 22mO (Alt: SCTH90N65G2V-7)
        RoHS: Compliant
        Min Qty: 1000        		Europe - 0
          SCTH90N65G2V-7
          DISTI # SCTH90N65G2V-7          		STMicroelectronicsMOSFET 90A, 650V, 22mO - Tape and Reel (Alt: SCTH90N65G2V-7)
          RoHS: Not Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 10000:$37.5900
          • 6000:$38.3900
          • 4000:$40.1900
          • 2000:$42.0900
          • 1000:$44.1900
          SCTH90N65G2V-7
          DISTI # 02AH6929          		STMicroelectronicsPTD WBG & POWER RF0
          • 1:$36.8800
          SCTH90N65G2V-7
          DISTI # 511-SCTH90N65G2V-7          		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          RoHS: Compliant          		0
          • 1:$52.8000
          • 5:$51.6200
          • 10:$49.2600
          • 25:$47.2000
          • 100:$42.7700
          • 250:$41.2900
          • 500:$36.4900
          영상 부분 # 설명
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7

          		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
          SCTH90N65G2V-7

          Mfr.#: SCTH90N65G2V-7

          OMO.#: OMO-SCTH90N65G2V-7-STMICROELECTRONICS

          		 SILICON CARBIDE POWER MOSFET 650
          유효성
          재고:
          Available
          주문 시:
          5500
          수량 입력:
          SCTH90N65G2V-7의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$52.80
          US$52.80
          5
          US$51.62
          US$258.10
          10
          US$49.26
          US$492.60
          25
          US$47.20
          US$1 180.00
          100
          US$42.77
          US$4 277.00
          250
          US$41.29
          US$10 322.50
          500
          US$36.49
          US$18 245.00
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