SQ9407EY-T1_GE3

Mfr. #:: SQ9407EY-T1_GE3
제조사:: Vishay / Siliconix
설명:: MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SQ9407EY-T1_GE3 데이터 시트
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HTML Datasheet:: SQ9407EY-T1_GE3 Datasheet SQ9407EY-T1_GE3 Datasheet (P4-P6)SQ9407EY-T1_GE3 Datasheet (P7-P9)SQ9407EY-T1_GE3 Datasheet (P10)
ECAD Model:
추가 정보:: SQ9407EY-T1_GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 4.6 A

Rds On - 드레인 소스 저항:: 67 mOhms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 40 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 3.75 W

구성:: 하나의

채널 모드:: 상승

자격:: AEC-Q101

상표명:: TrenchFET

포장:: 릴

시리즈:: 광장

트랜지스터 유형:: 1 P-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 10 S

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 13 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 36 ns

일반적인 켜기 지연 시간:: 11 ns

단위 무게:: 0.008466 oz

Tags: SQ940, SQ94, SQ9

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQ9407EY-T1_GE3 설명

***el Electronic: Trans MOSFET P-CH 60V 4.6A Automotive 8-Pin SOIC N T/R

***ark: Mosfet, P-Ch, 60V, 4.6A, 175Deg C, 3.75W Rohs Compliant: Yes

***ure Electronics: Single P-Channel 60 V 85 mOhm 3.75 W SMT Automotive Power Mosfet - SC-8

***et: P-CHANNEL 60-V (D-S) 175C MOSFET

***ronik: P-CH 60V 4,6A 85mOhm SO8 SMD RoHSconf

***ark: Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20

***eco: Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC

***ure Electronics: Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi

***ure Electronics: DMP4050SSS Series 40 V 4.4 A P-Channel Enhancement Mode Mosfet - SOIC-8

***el Electronic: Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W

***icroelectronics: P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package

***ure Electronics: P-Channel 60 V 160 mOhm Surface Mount STripFET F6 Power Mosfet SOIC-8

***et: Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R

***ure Electronics: Si4154DY Series N-Channel 40 V 3.3 mOhm Surface Mount Power Mosfet - SOIC-8

***enic: 40V 36A 7.8W 3.3m´Î@10V15A 2.5V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Source Voltage Vds:40V; On Resistance

***nell: MOSFET, N-CH, 40V, 36A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 7.8W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***ure Electronics: Single N-Channel 30 V 9.5 mOhms Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18200mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:3W ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 30V, 18.2A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:18.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-

***-Wing Technology: VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V

***ure Electronics: Single N-Channel 100 V 33 mOhm SMT TrenchFET Power Mosfet - PowerPAK SO-8

***nell: MOSFET, N-CH, 100V, 21A, PP SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:29.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

SQ9407EY-T1_GE3 추가 정보

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

부분 #	제조	설명	재고	가격
SQ9407EY-T1-GE3 DISTI # V36:1790_09219191	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) 175C MOSF	0	2500000:$0.4227 1250000:$0.4229 250000:$0.4345 25000:$0.4527 2500:$0.4557
SQ9407EY-T1_GE3 DISTI # SQ9407EY-T1_GE3CT-ND	Vishay Siliconix	MOSFET P-CHANNEL 60V 4.6A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2567In Stock	1000:$0.5029 500:$0.6370 100:$0.7711 10:$0.9890 1:$1.1100
SQ9407EY-T1_GE3 DISTI # SQ9407EY-T1_GE3TR-ND	Vishay Siliconix	MOSFET P-CHANNEL 60V 4.6A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.4166 5000:$0.4329 2500:$0.4557
SQ9407EY-T1_GE3 DISTI # SQ9407EY-T1_GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 4.6A 8-Pin SO T/R - Tape and Reel (Alt: SQ9407EY-T1_GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3969 15000:$0.4079 10000:$0.4199 5000:$0.4369 2500:$0.4509
SQ9407EY-T1_GE3 DISTI # SQ9407EY-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 4.6A 8-Pin SO T/R (Alt: SQ9407EY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3619 15000:€0.3889 10000:€0.4219 5000:€0.4899 2500:€0.7179
SQ9407EY-T1_GE3 DISTI # 781-SQ9407EY-T1_GE3	Vishay Intertechnologies	MOSFET -60V -4.6A 3.75W AEC-Q101 Qualified RoHS: Compliant	3214	1:$1.0800 10:$0.8920 100:$0.6850 500:$0.5890 1000:$0.4640 2500:$0.4330 5000:$0.4120 10000:$0.4030
SQ9407EY-T1-GE3 DISTI # 781-SQ9407EY-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3 RoHS: Compliant	0
SQ9407EY-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SQ9407EY-T1_GE3 RoHS: Compliant	Americas -

관련 상품

영상	부분 #	설명
	Mfr.#: SN74AUP1G125DCKR OMO.#: OMO-SN74AUP1G125DCKR	Buffers & Line Drivers Lo-Pwr Single Bus Buffer Gate
	Mfr.#: REF5050AQDRQ1 OMO.#: OMO-REF5050AQDRQ1	Voltage References AC Lo NoiseVery Low DriftPrec Vltg REF
	Mfr.#: NSR20F30NXT5G OMO.#: OMO-NSR20F30NXT5G	Schottky Diodes & Rectifiers 0603 FC SCHOTTKY DIODES
	Mfr.#: SD0603S040S0R2 OMO.#: OMO-SD0603S040S0R2	Schottky Diodes & Rectifiers 40volts 0.2A SIZE 0603
	Mfr.#: ATMEGA2560V-8AU OMO.#: OMO-ATMEGA2560V-8AU	8-bit Microcontrollers - MCU 256kB Flash 4kB EEPROM 86 I/O Pins
	Mfr.#: CMI-9653S-SMT-TR OMO.#: OMO-CMI-9653S-SMT-TR	Audio Indicators & Alerts Buzzer 9.6mm sq 2.7kHz 3V SMT
	Mfr.#: CMI-9653S-SMT-TR OMO.#: OMO-CMI-9653S-SMT-TR-CUI	AUDIO MAGNETIC IND 2-5V SMD
	Mfr.#: REF5050AQDRQ1 OMO.#: OMO-REF5050AQDRQ1-TEXAS-INSTRUMENTS	Voltage References AC Lo NoiseVery Low DriftPrec Vltg REF
	Mfr.#: ABM11AIG-40.000MHZ-4Z-T3 OMO.#: OMO-ABM11AIG-40-000MHZ-4Z-T3-ABRACON	CRYSTAL 40MHZ 10PF SMD
	Mfr.#: SN74AUP1G125DCKR OMO.#: OMO-SN74AUP1G125DCKR-TEXAS-INSTRUMENTS	Buffers & Line Drivers Lo-Pwr Single Bus Buffer Gate

유효성

재고:: Available
주문 시:: 1986
수량 입력:

SQ9407EY-T1_GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.08~~; ~~US$1.08~~

10: ~~US$0.89~~; ~~US$8.92~~

100: ~~US$0.68~~; ~~US$68.50~~

500: ~~US$0.59~~; ~~US$294.50~~

1000: ~~US$0.46~~; ~~US$464.00~~

시작

SQ940 3
SQ94 4
SQ9 97

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SQ9407EY-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes