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FDB5680

FDB5680
Mfr. #:
FDB5680
제조사:
Rochester Electronics, LLC
설명:
Power Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDB5680 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
페어차일드
제품 카테고리
IC 칩
Tags
FDB568, FDB56, FDB5, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order USE 512-FDB20AN06A0
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® SyncFET™ 30V, 42A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 113A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 12.6 Milliohms,ID 43A,D-Pak,PD 71W,VGS+/-20V
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; On Resistance Rds(On):0.0126Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11.1 Milliohms;ID 51A;TO-220AB;PD 80W;-55deg
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 80 W
***ment14 APAC
MOSFET, N, 55V, 51A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:80W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:51A; Junction to Case Thermal Resistance A:1.87°C/W; On State resistance @ Vgs = 10V:13.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:80W; Power Dissipation Pd:80W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 60V 43A 15,8mΩ 175°C TO-220 IRFB3806PBF
*** Source Electronics
Trans MOSFET N-CH 60V 43A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 43A TO-220AB
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 60V, 43A, 16.2 MOHM, 22 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-220AB; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
Single N-Channel Logic Level Power MOSFET 60V, 46A, 16mΩ
***(Formerly Allied Electronics)
NTD5865NLT4G N-channel MOSFET Transistor; 40 A; 60 V; 3-Pin DPAK
***ure Electronics
N-Channel 60 V 16 mOhm 52 W Surface Mount Power MosFet - TO-252-3
***nell
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016oh; Available until stocks are exhausted Alternative available
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 46 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 19 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 12.4 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 71
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
부분 # 제조 설명 재고 가격
FDB5680
DISTI # 512-FDB5680		ON SemiconductorMOSFET
RoHS: Not compliant		0
    FDB5680Fairchild Semiconductor CorporationPower Field-Effect Transistor, 40A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		8000
    • 1000:$1.5800
    • 500:$1.6600
    • 100:$1.7300
    • 25:$1.8100
    • 1:$1.9400
    FDB5680Fairchild Semiconductor Corporation40 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB609
    • 287:$0.6250
    • 51:$0.7000
    • 1:$2.0000
    영상 부분 # 설명
    FDB8870

    Mfr.#: FDB8870

    OMO.#: OMO-FDB8870

    		 MOSFET 30V N-Channel PowerTrench
    FDB045AN08AO

    Mfr.#: FDB045AN08AO

    OMO.#: OMO-FDB045AN08AO-1190

    		 신규 및 오리지널
    FDB088N08

    Mfr.#: FDB088N08

    OMO.#: OMO-FDB088N08-ON-SEMICONDUCTOR

    		 MOSFET N-CH 75V 75A D2PAK
    FDB2570FSC

    Mfr.#: FDB2570FSC

    OMO.#: OMO-FDB2570FSC-1190

    		 신규 및 오리지널
    FDB3672

    Mfr.#: FDB3672

    OMO.#: OMO-FDB3672-ON-SEMICONDUCTOR

    		 MOSFET N-CH 100V 44A D2PAK
    FDB7042

    Mfr.#: FDB7042

    OMO.#: OMO-FDB7042-1190

    		 신규 및 오리지널
    FDB9P25

    Mfr.#: FDB9P25

    OMO.#: OMO-FDB9P25-1190

    		 신규 및 오리지널
    FDB28N30TM-CUT TAPE

    Mfr.#: FDB28N30TM-CUT TAPE

    OMO.#: OMO-FDB28N30TM-CUT-TAPE-1190

    		 신규 및 오리지널
    FDB86360-F085

    Mfr.#: FDB86360-F085

    OMO.#: OMO-FDB86360-F085-ON-SEMICONDUCTOR

    		 MOSFET N-CH 80V 110A TO263
    FDBA 56-16-26 PN-K 059

    Mfr.#: FDBA 56-16-26 PN-K 059

    OMO.#: OMO-FDBA-56-16-26-PN-K-059-1190

    		 FDBA 56-16-26 PN-K 059
    유효성
    재고:
    Available
    주문 시:
    5000
    수량 입력:
    FDB5680의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.94
    US$0.94
    10
    US$0.89
    US$8.91
    100
    US$0.84
    US$84.38
    500
    US$0.80
    US$398.45
    1000
    US$0.75
    US$750.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
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