SIHD240N60E-GE3

SIHD240N60E-GE3
Mfr. #:
SIHD240N60E-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252)
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHD240N60E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD240N60E-GE3 DatasheetSIHD240N60E-GE3 Datasheet (P4-P6)SIHD240N60E-GE3 Datasheet (P7)
ECAD Model:
추가 정보:
SIHD240N60E-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
12 A
Rds On - 드레인 소스 저항:
240 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
23 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
78 W
구성:
하나의
채널 모드:
상승
포장:
시리즈:
E
트랜지스터 유형:
1 N-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
4 S
가을 시간:
14 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
26 ns
일반적인 켜기 지연 시간:
15 ns
Tags
SIHD2, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHD240N60E-GE3
DISTI # V99:2348_22587815
Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 240 m @ 10V0
    SIHD240N60E-GE3
    DISTI # SIHD240N60E-GE3-ND
    Vishay SiliconixMOSFET N-CHAN 600V DPAK TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    2926In Stock
    • 6000:$1.1522
    • 3000:$1.1666
    • 500:$1.5123
    • 100:$1.8406
    • 25:$2.1604
    • 10:$2.2900
    • 1:$2.5500
    SIHD240N60E-GE3
    DISTI # SIHD240N60E-GE3
    Vishay Intertechnologies- Tape and Reel (Alt: SIHD240N60E-GE3)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 20000:$1.0549
    • 12000:$1.0839
    • 8000:$1.1149
    • 4000:$1.1619
    • 2000:$1.1969
    SIHD240N60E-GE3
    DISTI # 07AH6939
    Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.208ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes50
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIHD240N60E-GE3
    DISTI # 78-SIHD240N60E-GE3
    Vishay IntertechnologiesMOSFET 600V Vds,+/-30V Vgs DPAK (TO-252)
    RoHS: Compliant
    2998
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 2000:$1.1100
    SIHD240N60E-GE3
    DISTI # 3019082
    Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-25250
    • 500:£0.9500
    • 250:£1.0100
    • 100:£1.0700
    • 10:£1.2900
    • 1:£1.6900
    SIHD240N60E-GE3
    DISTI # 3019082
    Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-252
    RoHS: Compliant
    50
    • 1000:$1.4600
    • 500:$1.5400
    • 250:$1.6300
    • 100:$1.7300
    • 10:$2.0800
    • 1:$2.7300
    영상 부분 # 설명
    NVB110N65S3F

    Mfr.#: NVB110N65S3F

    OMO.#: OMO-NVB110N65S3F

    MOSFET SUPERFET3 650V D2PAK PKG
    FCD260N65S3

    Mfr.#: FCD260N65S3

    OMO.#: OMO-FCD260N65S3

    MOSFET SUPERFET3 260MOHM TO252
    0ADHC0440-BE

    Mfr.#: 0ADHC0440-BE

    OMO.#: OMO-0ADHC0440-BE

    Cartridge Fuses FUSE, CERAMIC TUBE 0.44A 1000VAC1000VDC
    105017-0001

    Mfr.#: 105017-0001

    OMO.#: OMO-105017-0001-1190

    MICRO USB, 2.0 TYPE B, RECEPTACLE, SMT, USB Connector Type:Micro USB Type B, USB Standard:USB 2.0, Gender:Receptacle, No. of Positions:5Positions, Connector Mounting:Surface Mount, Orientation:R
    FCD260N65S3

    Mfr.#: FCD260N65S3

    OMO.#: OMO-FCD260N65S3-ON-SEMICONDUCTOR

    MOSFET N-CH 260MOHM TO252
    NVB110N65S3F

    Mfr.#: NVB110N65S3F

    OMO.#: OMO-NVB110N65S3F-ON-SEMICONDUCTOR

    SUPERFET3 650V D2PAK PKG
    F971D106MCCHT3

    Mfr.#: F971D106MCCHT3

    OMO.#: OMO-F971D106MCCHT3-AVX

    CAP, TANT, AEC-Q200, 10UF, 20V, CASE C
    1473005-4

    Mfr.#: 1473005-4

    OMO.#: OMO-1473005-4-TE-CONNECTIVITY

    IC & Component Sockets DDR2 SADIMM 200P STANDARD HOUSING
    유효성
    재고:
    Available
    주문 시:
    1985
    수량 입력:
    SIHD240N60E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.55
    US$2.55
    10
    US$2.12
    US$21.20
    100
    US$1.64
    US$164.00
    500
    US$1.44
    US$720.00
    1000
    US$1.19
    US$1 190.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
    최신 제품
    • SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • Compare SIHD240N60E-GE3
      SIHD240N60EGE3 vs SIHD2N80AEGE3 vs SIHD2N80EGE3
    • PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    Top