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BSZ076N06NS3 G

BSZ076N06NS3 G
Mfr. #:
BSZ076N06NS3 G
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSZ076N06NS3 G 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSZ076N06NS3 G 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TSDSON-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
20 A
Rds On - 드레인 소스 저항:
7.6 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
37 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
69 W
구성:
하나의
채널 모드:
상승
상표명:
옵티모스
포장:
릴
키:
1.1 mm
길이:
3.3 mm
시리즈:
OptiMOS 3
트랜지스터 유형:
1 N-Channel
유형:
OptiMOS 3 Power-Transistor
너비:
3.3 mm
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
39 S, 20 S
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
40 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
20 ns
일반적인 켜기 지연 시간:
15 ns
부품 번호 별칭:
BSZ076N06NS3GATMA1 BSZ76N6NS3GXT SP000454420
단위 무게:
0.002681 oz
Tags
BSZ076, BSZ07, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
BSZ076N06NS3GATMA1
DISTI # V72:2272_06384428		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.5041
  • 1000:$0.5094
  • 500:$0.6512
  • 250:$0.7441
  • 100:$0.7518
  • 25:$0.9817
  • 10:$1.0907
  • 1:$1.2841
BSZ076N06NS3GATMA1
DISTI # V36:1790_06384428		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
    BSZ076N06NS3GATMA1
    DISTI # BSZ076N06NS3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Limited Supply - Call
    • 5000:$0.5242
    BSZ076N06NS3GATMA1
    DISTI # BSZ076N06NS3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSZ076N06NS3GATMA1
      DISTI # 33139496      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R
      RoHS: Compliant      		5000
      • 3000:$0.5041
      • 1000:$0.5094
      • 500:$0.6512
      • 250:$0.7441
      • 100:$0.7518
      • 25:$0.9817
      • 14:$0.9916
      BSZ076N06NS3GXT
      DISTI # BSZ076N06NS3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
      RoHS: Compliant
      Min Qty: 5000
      Container: Reel      		Americas - 0
      • 50000:$0.4549
      • 30000:$0.4629
      • 20000:$0.4789
      • 10000:$0.4969
      • 5000:$0.5159
      BSZ076N06NS3GATMA1
      DISTI # BSZ076N06NS3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Bulk (Alt: BSZ076N06NS3GATMA1)
      Min Qty: 782
      Container: Bulk      		Americas - 0
      • 7820:$0.4059
      • 3910:$0.4129
      • 2346:$0.4279
      • 1564:$0.4439
      • 782:$0.4609
      BSZ076N06NS3GATMA1
      DISTI # SP000454420      		Infineon Technologies AGTrans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R (Alt: SP000454420)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel      		Europe - 0
      • 50000:€0.4169
      • 30000:€0.4489
      • 20000:€0.4869
      • 10000:€0.5309
      • 5000:€0.6489
      BSZ076N06NS3GATMA1
      DISTI # 47W3362      		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes8603
      • 1000:$0.5430
      • 500:$0.6880
      • 100:$0.7790
      • 10:$1.0100
      • 1:$1.1800
      BSZ076N06NS3 G
      DISTI # 726-BSZ076N06NS3G      		Infineon Technologies AGMOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
      RoHS: Compliant      		0
        BSZ076N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
        RoHS: Compliant        		16557
        • 1000:$0.4300
        • 500:$0.4600
        • 100:$0.4800
        • 25:$0.5000
        • 1:$0.5300
        BSZ076N06NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Not Compliant        		2600
        • 1000:$0.4200
        • 500:$0.4400
        • 100:$0.4600
        • 25:$0.4800
        • 1:$0.5200
        BSZ076N06NS3GInfineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 14A, 60V, 0.0076OHM, N-CHANNEL, SI, POWER, MOSFET3244
        • 2134:$0.3300
        • 477:$0.3750
        • 1:$1.2000
        BSZ076N06NS3GATMA1Infineon Technologies AG 2809
          BSZ076N06NS3GInfineon Technologies AG 5877
            BSZ076N06NS3GATMA1
            DISTI # 2212829            		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
            RoHS: Compliant            		8603
            • 100:$1.1900
            • 10:$1.5500
            • 1:$1.8000
            BSZ076N06NS3GATMA1
            DISTI # 2212829            		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON8618
            • 500:£0.5910
            • 250:£0.6300
            • 100:£0.6680
            • 25:£0.8670
            • 5:£1.0700
            BSZ076N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		Europe - 5000
              영상 부분 # 설명
              BSZ076N06NS3 G

              Mfr.#: BSZ076N06NS3 G

              OMO.#: OMO-BSZ076N06NS3-G

              		 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
              BSZ076N06NS3GATMA1

              Mfr.#: BSZ076N06NS3GATMA1

              OMO.#: OMO-BSZ076N06NS3GATMA1

              		 MOSFET MV POWER MOS
              BSZ076N06NS3GXT

              Mfr.#: BSZ076N06NS3GXT

              OMO.#: OMO-BSZ076N06NS3GXT-1190

              		 Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
              BSZ076N06NS3G

              Mfr.#: BSZ076N06NS3G

              OMO.#: OMO-BSZ076N06NS3G-1190

              		 신규 및 오리지널
              BSZ076N06NS3GATMA1

              Mfr.#: BSZ076N06NS3GATMA1

              OMO.#: OMO-BSZ076N06NS3GATMA1-INFINEON-TECHNOLOGIES

              		 MOSFET N-CH 60V 20A TSDSON-8
              BSZ076N06NS3 G

              Mfr.#: BSZ076N06NS3 G

              OMO.#: OMO-BSZ076N06NS3-G-128

              		 MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
              유효성
              재고:
              Available
              주문 시:
              3000
              수량 입력:
              BSZ076N06NS3 G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
              참고 가격(USD)
              수량
              단가
              내선 가격
              1
              US$1.17
              US$1.17
              10
              US$1.00
              US$10.00
              100
              US$0.77
              US$77.10
              500
              US$0.68
              US$340.50
              1000
              US$0.54
              US$538.00
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