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SGF80N60UFTU

SGF80N60UFTU
Mfr. #:
SGF80N60UFTU
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors Discrete Hi-P IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SGF80N60UFTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-3PF-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
최대 게이트 이미터 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
SGF80N60UF
포장:
튜브
연속 수집가 현재 IC 최대:
80 A
키:
16.7 mm
길이:
15.7 mm
너비:
5.7 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
360
하위 카테고리:
IGBT
단위 무게:
0.245577 oz
Tags
SGF80, SGF8, SGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail
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Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
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SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;
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Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
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FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***th Star Micro
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance
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FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
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IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
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Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
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Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes
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INSULATED GATE BIPOLAR TRANSISTO
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부분 # 제조 설명 재고 가격
SGF80N60UFTU
DISTI # 26885511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube1440
  • 720:$5.2985
  • 360:$5.4641
SGF80N60UFTU
DISTI # SGF80N60UFTU-ND		ON SemiconductorIGBT 600V 80A 110W TO3PF
RoHS: Compliant
Min Qty: 360
Container: Tube		Limited Supply - Call
  • 360:$4.6496
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 360:$3.0900
  • 720:$2.9900
  • 1440:$2.9900
  • 2160:$2.9900
  • 3600:$2.8900
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€4.0900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€2.9900
  • 100:€2.8900
  • 500:€2.8900
  • 1000:€2.7900
SGF80N60UFTU
DISTI # 512-SGF80N60UFTU		ON SemiconductorIGBT Transistors Discrete Hi-P IGBT
RoHS: Compliant		0
    SGF80N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		23040
    • 1000:$5.5600
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8400
    영상 부분 # 설명
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU

    		 IGBT Transistors Discrete Hi-P IGBT
    SGF80N60UF

    Mfr.#: SGF80N60UF

    OMO.#: OMO-SGF80N60UF-1190

    		 신규 및 오리지널
    SGF80N60UF G80N60UF

    Mfr.#: SGF80N60UF G80N60UF

    OMO.#: OMO-SGF80N60UF-G80N60UF-1190

    		 신규 및 오리지널
    SGF80N60UFTUPBF

    Mfr.#: SGF80N60UFTUPBF

    OMO.#: OMO-SGF80N60UFTUPBF-1190

    		 신규 및 오리지널
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Discrete Hi-P IGBT
    유효성
    재고:
    Available
    주문 시:
    4000
    수량 입력:
    SGF80N60UFTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    360
    US$4.42
    US$1 591.20
    720
    US$4.03
    US$2 901.60
    1080
    US$3.51
    US$3 790.80
    2520
    US$3.38
    US$8 517.60
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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