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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BF999E6327HTSA1 DISTI # BF999E6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH RF 20V 30MA SOT-23 RoHS: Compliant Min Qty: 9000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
| BF 999 E6327 DISTI # BF 999 E6327 | Infineon Technologies AG | Trans MOSFET N-CH 20V 0.03A 3-Pin SOT-23 T/R (Alt: BF 999 E6327) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel | Asia - 9000 |
|
| BF 999 E6327 DISTI # SP000010985 | Infineon Technologies AG | Trans MOSFET N-CH 20V 0.03A 3-Pin SOT-23 T/R (Alt: SP000010985) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 15000 |
|
| BF 999 E6327 DISTI # SP000010985 | Infineon Technologies AG | Trans MOSFET N-CH 20V 0.03A 3-Pin SOT-23 T/R (Alt: SP000010985) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| BF999E6327HTSA1 DISTI # BF999E6327HTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 20V 0.03A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BF999E6327HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel | Americas - 0 |
|
| BF999E6327HTSA1 DISTI # 13AC8251 | Infineon Technologies AG | MOSFET, N-CH, AEC-Q101, 20V, SOT23,Transistor Polarity:N Channel,Continuous Drain Current Id:30mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):-,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:-,Power Dissipation RoHS Compliant: Yes | 4954 |
|
| BF 999 E6327 DISTI # 726-BF999E6327 | Infineon Technologies AG | RF MOSFET Transistors Silicon N-Channel MOSFET Triode RoHS: Compliant | 1040 |
|
| BF 999 E6433 DISTI # 726-BF999E6433 | Infineon Technologies AG | RF MOSFET Transistors Silicon N-Ch MOSFET Triode RoHS: Compliant | 0 | |
| BF999E6327HTSA1 DISTI # 726-BF999E6327HTSA1 | Infineon Technologies AG | RF MOSFET Transistors Silicon N-Channel MOSFET Triode RoHS: Compliant | 9069 |
|
| BF999E6327HTSA1 DISTI # 8269430P | Infineon Technologies AG | RF MOSFET TRIODE N-CH 20V 300MHZ SOT23, RL | 2600 |
|
| BF 999 E6327 | Infineon Technologies AG | 300 | ||
| BF999E6327 DISTI # BF999E6327 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,RF,12V,30mA,200mW,SOT23,SMT | 2239 |
|
| BF999E6327HTSA1 DISTI # 2725798 | Infineon Technologies AG | MOSFET, N-CH, AEC-Q101, 20V, SOT23 RoHS: Compliant | 5049 |
|
| BF999E6327HTSA1 DISTI # 2725798 | Infineon Technologies AG | MOSFET, N-CH, AEC-Q101, 20V, SOT23 RoHS: Compliant | 4954 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BF999E6327HTSA1 OMO.#: OMO-BF999E6327HTSA1 |
RF MOSFET Transistors Silicon N-Channel MOSFET Triode |
|
Mfr.#: BF999 E6393 |
신규 및 오리지널 |
|
|
Mfr.#: BF999 E6433 |
신규 및 오리지널 |
|
|
Mfr.#: BF999-E6327 OMO.#: OMO-BF999-E6327-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BF999E-6327 |
신규 및 오리지널 |
|
|
Mfr.#: BF999E6327 |
Transistor: N-MOSFET, unipolar, RF, 12V, 30mA, 200mW, SOT23, SMT |
|
|
Mfr.#: BF999E6359 |
신규 및 오리지널 |
|
|
Mfr.#: BF999E6393 |
신규 및 오리지널 |
|
|
Mfr.#: BF999E7727 |
신규 및 오리지널 |
|
Mfr.#: BF999E6327HTSA1 |
RF MOSFET Transistors Silicon N-Channel MOSFET Triode |
