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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI9410BDY-T1-GE3 DISTI # V36:1790_14141481 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI9410BDY-T1-GE3 DISTI # SI9410BDY-T1-GE3-ND | Vishay Siliconix | MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI9410BDY-T1-E3 DISTI # SI9410BDY-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 6.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI9410BDY-T1-E3 DISTI # 781-SI9410BDY-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 RoHS: Compliant | 0 | |
| SI9410BDY-T1 DISTI # 781-SI9410BDY | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4800BDY-E3 RoHS: Not compliant | 0 | |
| SI9410BDY-T1-GE3 DISTI # 781-SI9410BDY-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 RoHS: Compliant | 0 | |
| SI9410BDY-T1-E3 | Vishay Siliconix | 1728 | ||
| SI9410BDY | Vishay Siliconix | 205 |
| |
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 2892 | ||
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 1150 | ||
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 2066 | ||
| SI9410BDY | Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 164 |
|
| SI9410BDY-E3 | Vishay Intertechnologies | MOSFET Transistor, N-Channel, SO | 72 |
|
| SI9410BDY-T1 | Vishay Intertechnologies | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.2A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 534 |
|
| SI9410BDY-T1-E3 | Vishay Intertechnologies | MOSFET Transistor, N-Channel, SO | 920 |
|
| SI9410BDY DISTI # 8156549 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| SI9410BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2025 | |
| SI9410BDYE3 | Vishay Siliconix | Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 350 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI9405 OMO.#: OMO-SI9405-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9407B OMO.#: OMO-SI9407B-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9422DY OMO.#: OMO-SI9422DY-1190 |
MOSFET 200V 1.7A 2.5W |
|
|
Mfr.#: SI9430DY-TI OMO.#: OMO-SI9430DY-TI-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9433ADY-T1-E3 OMO.#: OMO-SI9433ADY-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9434ADY OMO.#: OMO-SI9434ADY-1190 |
MOSFET Transistor, P-Channel, SO |
|
|
Mfr.#: SI9435ADY-T1-E3 OMO.#: OMO-SI9435ADY-T1-E3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI9435BDY-T1 OMO.#: OMO-SI9435BDY-T1-1190 |
MOSFET 30V 5.7A 2.5W |
|
|
Mfr.#: SI9435DY-T1-E3/GE3 OMO.#: OMO-SI9435DY-T1-E3-GE3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI946 OMO.#: OMO-SI946-1190 |
신규 및 오리지널 |