FDR836P

Mfr. #:: FDR836P
제조사:: Rochester Electronics, LLC
설명:: P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDR836P 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: FDR83, FDR8, FDR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDR836P 설명

***et: P-Channel 2.5V Specified MOSFET

***ser: Not available to order DISC BY MFG 2/02

***(Formerly Allied Electronics): SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP

***itex: Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6

***ure Electronics: N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6

***ark: Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No

***ment14 APAC: MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V

***emi: N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

*** Source Electronics: Trans MOSFET N-CH 20V 6.2A 6-Pin TSOT-23 T/R / MOSFET N-CH 20V 6.2A SSOT-6

***ark: Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:820mV; Power Dissipation:1.6W; No. of Pins:6Pins RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

***Yang: Transistor MOSFET Array Dual N-CH 20V 7.5A 8-Pin SOIC T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 7.5A, 18mΩ

***ure Electronics: Dual N-Channel 20 V 18 mOhm SMT PowerTrench Mosfet - SOIC-8

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 25°C:7.5A; Current Id Max:7.5A; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; SMD Marking:FDS6890A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:1.5V

***emi: N-Channel PowerTrench® MOSFET 20V, 7A, 26mΩ

***ure Electronics: N-Channel 20 V 7 A 14 mOhm Power Trench® Mosfet - MicorFET

***rchild Semiconductor: This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on) @ VGS = 1.5 V on special MicroFET leadframe.

***nell: MOSFET, N CH, 20V, 7A, MFET1.6X1.6; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***ure Electronics: P-CH MOSFET TSOP-6 20V 27MOHM @ 4.5V

***ment14 APAC: MOSFET, P CH, -20V, -8A, TSOP-6

***ronik: P-CHANNEL-FET 7A 20V TSOP-6 RoHSconf

***nell: MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0347ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:2.97W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

***ure Electronics: SI3493BDV Series 20 V 0.0275 O Surface Mount Power Mosfet - TSOP-6

***ical: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***mal: P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V

***id Electronics: Small Signal Field-Effect Transistor 8A I(D)

***el Electronic: MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V

Market price

부분 #	제조	설명	재고	가격
FDR836P DISTI # FDR836P	ON Semiconductor	P-Channel 2.5V Specified MOSFET - Bulk (Alt: FDR836P) RoHS: Not Compliant Min Qty: 404 Container: Bulk	Americas - 0	4040:$0.7649 2020:$0.7839 1212:$0.7939 808:$0.8049 404:$0.8099
FDR836P DISTI # 512-FDR836P	ON Semiconductor	MOSFET DISC BY MFG 2/02 RoHS: Not compliant	0
FDR836P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 6.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	15000	1000:$0.8200 500:$0.8600 100:$0.8900 25:$0.9300 1:$1.0000

관련 상품

영상	부분 #	설명
	Mfr.#: FDR6580 OMO.#: OMO-FDR6580	MOSFET SSOT-8 N-CH 2.5V
	Mfr.#: FDR840P OMO.#: OMO-FDR840P	MOSFET SSOT-8 P-CH 2.5V
	Mfr.#: FDR838P OMO.#: OMO-FDR838P	MOSFET SSOT-8 P-CH -20V
	Mfr.#: FDR-L60028SC OMO.#: OMO-FDR-L60028SC-1190	신규 및 오리지널
	Mfr.#: FDR54E OMO.#: OMO-FDR54E-1190	신규 및 오리지널
	Mfr.#: FDR54U OMO.#: OMO-FDR54U-1190	신규 및 오리지널
	Mfr.#: FDR6674A-NL OMO.#: OMO-FDR6674A-NL-1190	신규 및 오리지널
	Mfr.#: FDR6678AF40 OMO.#: OMO-FDR6678AF40-1190	신규 및 오리지널
	Mfr.#: FDR840P-ND(FDS840P) OMO.#: OMO-FDR840P-ND-FDS840P--1190	신규 및 오리지널
	Mfr.#: FDR5533-120-01 OMO.#: OMO-FDR5533-120-01-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3500
수량 입력:

FDR836P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.00~~; ~~US$0.00~~

10: ~~US$0.00~~; ~~US$0.00~~

100: ~~US$0.00~~; ~~US$0.00~~

500: ~~US$0.00~~; ~~US$0.00~~

1000: ~~US$0.00~~; ~~US$0.00~~

시작

FDR83 13
FDR8 33
FDR 105

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More Newest Products

FDR836P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes