IRG7PH35UD1-E

Mfr. #:: IRG7PH35UD1-E
제조사:: Infineon Technologies
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG7PH35UD1-E 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: IGBT - 싱글

시리즈: -

포장: 튜브

단위 무게: 1.340411 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247AD

파워맥스: 179W

역복구-시간-trr: -

전류 수집기 Ic-Max: 50A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: 도랑

전류 수집기 펄스 Icm: 150A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 20A

스위칭 에너지: 620μJ (off)

게이트 차지: 130nC

Td-on-off-25°C: -/160ns

시험조건: 600V, 20A, 10 Ohm, 15V

Pd 전력 손실: 179 W

컬렉터-이미터-전압-VCEO-최대: 1.2 kV

컬렉터-이미터-포화-전압: 2.2 V

연속 수집기 전류 at-25-C: 50 A

Tags: IRG7PH35UD1-E, IRG7PH35UD1, IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
IRG7PH35UD1-EP DISTI # IRG7PH35UD1-EP-ND	Infineon Technologies AG	IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 350 Container: Tube	Limited Supply - Call
IRG7PH35UD1-EP DISTI # 76R0795	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	2	1:$5.9600 10:$5.0700 25:$4.9800 50:$4.6900 100:$4.3900 250:$4.1700 500:$3.7100
IRG7PH35UD1-EP DISTI # 942-IRG7PH35UD1-EP	Infineon Technologies AG	IGBT Transistors IGBT DISCRETES RoHS: Compliant	15	1:$5.9600 10:$5.0700 25:$4.9800 100:$4.3900 250:$4.1700 500:$3.7100 1000:$3.1400 2500:$2.9000
IRG7PH35UD1-EP	International Rectifier	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant	951800	1000:$2.9600 500:$3.1200 100:$3.2400 25:$3.3800 1:$3.6400
IRG7PH35UD1-EP DISTI # 9074921P	Infineon Technologies AG	IGBT N-CHANNEL 1200V 50A TO-247AD, TU	15	10:£3.9550 50:£3.8900 100:£3.2900 250:£3.1650
IRG7PH35UD1-EP DISTI # 1822979	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant	2	1:£5.4490 10:£4.0120 100:£3.3320 250:£3.2050 500:£3.0500
IRG7PH35UD1-EP DISTI # 1822979	Infineon Technologies AG	INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant	2	1:$9.4300 10:$8.0300 25:$7.8800 100:$6.9600 250:$6.6000 500:$5.8700 1000:$4.9700 2500:$4.5900

관련 상품

영상	부분 #	설명
	Mfr.#: IRG7PH35UD-EP OMO.#: OMO-IRG7PH35UD-EP	IGBT Transistors IGBT DISCRETES
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	Mfr.#: IRG7PH42UPBF OMO.#: OMO-IRG7PH42UPBF-INFINEON-TECHNOLOGIES	IGBT Transistors 1200V 90A
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