OMO ElectronicOMO Electronic
Expand menu
0 카트

PD57018TR-E

PD57018TR-E
Mfr. #:
PD57018TR-E
제조사:
STMicroelectronics
설명:
RF MOSFET Transistors POWER R.F.
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PD57018TR-E 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
PD57018TR-E 추가 정보 PD57018TR-E Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
N-채널
기술:
시
Id - 연속 드레인 전류:
2.5 A
Vds - 드레인 소스 항복 전압:
65 V
Rds On - 드레인 소스 저항:
760 mOhms
얻다:
16.5 dB
출력 파워:
18 W
최소 작동 온도:
- 65 C
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
PowerSO-10RF-Formed-4
포장:
릴
구성:
하나의
키:
3.5 mm
길이:
7.5 mm
동작 주파수:
1 GHz
시리즈:
PD57018-E
유형:
RF 전력 MOSFET
너비:
9.4 mm
상표:
ST마이크로일렉트로닉스
채널 모드:
상승
습기에 민감한:
네
Pd - 전력 손실:
31.7 W
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
600
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
20 V
단위 무게:
0.105822 oz
Tags
PD5701, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***th Star Micro
Transistor MOSFET N-CH 65V 2.5A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
18W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57018-E Series 1 GHz 18 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-1
***(Formerly Allied Electronics)
IRF7103PBF Dual N-channel MOSFET Transistor, 3 A, 50 V, 8-Pin SOIC | Infineon IRF7103PBF
***eco
Transistor MOSFET N Channel 50 Volt 3 Amp 8-Pin SOIC Tape and Reel
***itex
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 50 V 0.13 Ohm 12 nC HEXFET® Power Mosfet - SOIC-8
***et Japan
Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R
***nell
MOSFET, DUAL NN LOGIC SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Di
***ark
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:50V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:3A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7103TRPBF.
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***SIT Distribution GmbH
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
부분 # 제조 설명 재고 가격
PD57018TR-E
DISTI # V72:2272_17706242		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
RoHS: Compliant		335
  • 250:$28.8500
  • 100:$30.3200
  • 25:$33.3100
  • 10:$34.6500
  • 1:$37.4500
PD57018TR-E
DISTI # 497-6477-1-ND		STMicroelectronicsTRANSISTOR RF POWERSO-10
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    PD57018TR-E
    DISTI # 497-6477-6-ND    		STMicroelectronicsTRANSISTOR RF POWERSO-10
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      PD57018TR-E
      DISTI # 497-6477-2-ND      		STMicroelectronicsTRANSISTOR RF POWERSO-10
      RoHS: Compliant
      Min Qty: 600
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 600:$23.1702
      PD57018TR-E
      DISTI # 27537212      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.8600
      • 100:$30.3100
      • 25:$33.3300
      • 10:$34.6700
      • 1:$37.5400
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsTrans MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD57018TR-E)
      RoHS: Compliant
      Min Qty: 600
      Container: Reel      		Americas - 0
      • 600:$25.0900
      • 1200:$23.8900
      • 2400:$22.8900
      • 3600:$21.7900
      • 6000:$21.3900
      PD57018-E
      DISTI # 511-PD57018-E      		STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
      RoHS: Compliant      		92
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      PD57018TR-E
      DISTI # 511-PD57018TR-E      		STMicroelectronicsRF MOSFET Transistors POWER R.F.
      RoHS: Compliant      		0
      • 1:$32.4100
      • 5:$32.0700
      • 10:$29.8900
      • 25:$28.5500
      • 100:$25.5300
      • 250:$24.3500
      • 600:$23.1800
      PD57018TR-E
      DISTI # PD57018TR-E      		STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant      		0
      • 600:$23.0600
      • 1000:$21.9000
      PD57018TR-E
      DISTI # C1S730200364012      		STMicroelectronicsTrans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
      RoHS: Compliant      		335
      • 250:$28.9200
      • 100:$30.2800
      • 25:$33.5700
      • 10:$34.8600
      • 1:$37.4400
      영상 부분 # 설명
      PD57006S

      Mfr.#: PD57006S

      OMO.#: OMO-PD57006S

      		 RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
      PD57060STR-E

      Mfr.#: PD57060STR-E

      OMO.#: OMO-PD57060STR-E

      		 RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      PD57002SK

      Mfr.#: PD57002SK

      OMO.#: OMO-PD57002SK-1190

      		 신규 및 오리지널
      PD57006

      Mfr.#: PD57006

      OMO.#: OMO-PD57006-1152

      		 RF MOSFET, N CHANNEL, 28V, POWERSO-10RF, Drain Source Voltage Vds:65V, Continuous Drain Current Id:1A, Power Dissipation Pd:20W, Operating Frequency Min:925MHz, Operating Frequency Max:960MHz, R
      PD57006E

      Mfr.#: PD57006E

      OMO.#: OMO-PD57006E-1190

      		 신규 및 오리지널
      PD57045S-E

      Mfr.#: PD57045S-E

      OMO.#: OMO-PD57045S-E-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      PD57070

      Mfr.#: PD57070

      OMO.#: OMO-PD57070-1190

      		 신규 및 오리지널
      PD57070SE

      Mfr.#: PD57070SE

      OMO.#: OMO-PD57070SE-1190

      		 신규 및 오리지널
      PD57018S-E

      Mfr.#: PD57018S-E

      OMO.#: OMO-PD57018S-E-STMICROELECTRONICS

      		 MOSFET 8 BITS MICROCONTR
      PD57030

      Mfr.#: PD57030

      OMO.#: OMO-PD57030-STMICROELECTRONICS

      		 FET RF 65V 945MHZ PWRSO-10
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      PD57018TR-E의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$32.41
      US$32.41
      5
      US$32.07
      US$160.35
      10
      US$29.89
      US$298.90
      25
      US$28.55
      US$713.75
      100
      US$25.53
      US$2 553.00
      250
      US$24.35
      US$6 087.50
      시작
      최신 제품
      • PWD13F60 High-Density Power Driver
        PWD13F60 High-Density Power Driver
        STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
      • STSPIN32F0 Motor-Control System
        STSPIN32F0 Motor-Control System
        STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
      • STripFET VI DeepGATE Series Power MOSFETs
        STripFET VI DeepGATE Series Power MOSFETs
        STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
      • Compare PD57018TR-E
        Compare PD57018TR-E
        PD57018 vs PD57018E vs PD57018S
      • ESDA8P30-1T2 TVS Diode
        ESDA8P30-1T2 TVS Diode
        STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
      • CLOUD-ST25TA02KB Evaluation Board
        CLOUD-ST25TA02KB Evaluation Board
        STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
      More Newest Products
      Top