A2T21H360-24SR6

Mfr. #:: A2T21H360-24SR6
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A2T21H360-24SR6 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

기술:: 시

포장:: 릴

상표:: NXP / 프리스케일

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 150

하위 카테고리:: MOSFET

부품 번호 별칭:: 935318247128

단위 무게:: 0.303504 oz

Tags: A2T21H3, A2T21H, A2T21, A2T2, A2T

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2T21H360-24SR6 설명

*** Electronic Components: RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V

***W: RF Power Transistor,2110 to 2170 MHz, 301 W, Typ Gain in dB is 16.2 @ 2140 MHz, 28 V, LDMOS, SOT1800

***et: Transistor RF FET N-CH 65V 2110MHz to 2170MHz 6-Pin NI-1230S T/R

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ure Electronics: P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23

***ical: Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

***ark: N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No

***SIT Distribution GmbH: Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

Market price

부분 #	제조	설명	재고	가격
A2T21H360-24SR6 DISTI # A2T21H360-24SR6-ND	NXP Semiconductors	IC TRANS RF LDMOS RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$160.8065
A2T21H360-24SR6 DISTI # A2T21H360-24SR6	Avnet, Inc.	Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R (Alt: A2T21H360-24SR6) RoHS: Compliant Min Qty: 150 Container: Tape and Reel	Europe - 0	150:€161.7900 300:€155.7900 600:€150.1900 900:€145.0900 1500:€140.1900
A2T21H360-24SR6 DISTI # A2T21H360-24SR6	Avnet, Inc.	Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R - Tape and Reel (Alt: A2T21H360-24SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0	150:$176.1900 300:$169.2900 600:$162.6900 900:$156.7900 1500:$153.7900
A2T21H360-24SR6 DISTI # 841-A2T21H360-24SR6	NXP Semiconductors	RF MOSFET Transistors A2T21H360-24S/CFM6F///REEL 13 Q2 NDP RoHS: Compliant	0	150:$157.1900
A2T21H360-24SR6 DISTI # A2T21H360-24SR6	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	100	150:$160.1600

관련 상품

영상	부분 #	설명
	Mfr.#: A2T21H360-24SR6 OMO.#: OMO-A2T21H360-24SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
	Mfr.#: A2T21H360-23NR6 OMO.#: OMO-A2T21H360-23NR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
	Mfr.#: A2T21H360-24SR6 OMO.#: OMO-A2T21H360-24SR6-NXP-SEMICONDUCTORS	IC TRANS RF LDMOS
	Mfr.#: A2T21H360-23NR6 OMO.#: OMO-A2T21H360-23NR6-NXP-SEMICONDUCTORS	RF TRANS 2.1GHZ 360W OM1230-4L2S
	Mfr.#: A2T21H360-23N OMO.#: OMO-A2T21H360-23N-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3500
수량 입력:

A2T21H360-24SR6의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$176.85~~; ~~US$176.85~~

5: ~~US$172.90~~; ~~US$864.50~~

10: ~~US$169.37~~; ~~US$1 693.70~~

25: ~~US$166.86~~; ~~US$4 171.50~~

50: ~~US$160.81~~; ~~US$8 040.50~~

100: ~~US$157.19~~; ~~US$15 719.00~~

시작

A2T21H3 3
A2T21H 9
A2T21 15
A2T2 40
A2T 104

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A2T21H360-24SR6

Step1:Vacuum Packaging with PL

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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