HN2C01FU-GR(T5L,F)

Mfr. #:: HN2C01FU-GR(T5L,F)
제조사:: Toshiba
설명:: Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HN2C01FU-GR(T5L,F) 데이터 시트
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HTML Datasheet:: HN2C01FU-GR(T5L,F) Datasheet
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: US-6

트랜지스터 극성:: NPN

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 50 V

컬렉터-베이스 전압 VCBO:: 60 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 0.1 V

최대 DC 수집기 전류:: 150 mA

이득 대역폭 곱 fT:: 80 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 125 C

시리즈:: HN2C01

DC 전류 이득 hFE 최대:: 400

포장:: 릴

상표:: 도시바

DC 수집기/기본 이득 hfe 최소:: 120

Pd - 전력 손실:: 200 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

Tags: HN2C01FU-GR(T, HN2C01FU-G, HN2C01FU, HN2C01, HN2C0, HN2C, HN2

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HN2C01FU-GR(T5L,F) 설명

***ical: Trans GP BJT NPN 50V 0.15A 6-Pin US T/R

***i-Key: TRANS 2NPN 50V 0.15A US6

*** Source Electronics: Trans GP BJT NPN/PNP 50V 0.15A 150mW 6-Pin UMT T/R / TRANS NPN/PNP 50V 0.15A 6UMT

***(Formerly Allied Electronics): ROHM UMZ1NTR Dual NPN+PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMZ1NTR

***ure Electronics: UMZ1N Series 50 V 150 mA SMT NPN/PNP General Purpose Dual Transistor - SC-88

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz

***roFlash: ROHM UMX3NTR Dual NPN Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-88

***ure Electronics: UMX3N Series 50 V 150 mA 150 mW SMT Dual NPN General purpose Transistor-SC-88

***et: Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz

***roFlash: ROHM UMX1NTN Dual NPN Bipolar Transistor; 0.15 A; 50 V; 6-Pin SC-88

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: UMX1N Series 50 V 150 mA SMT Dual NPN General purpose Transistor-SC-88

***ical: Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R

***ark: Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes

***et: Trans Digital BJT NPN 50V 100mA 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: BC846AS Series 65 V 100 mA Dual NPN Small Signal SMT Transistor - SOT-363

***ical: Trans GP BJT NPN 65V 0.1A 200mW 6-Pin SOT-363 T/R

***ment14 APAC: BIPOLAR ARRAY, DUAL NPN, 65V/0.1A/SOT363;

***pmh: TRANS NPN/PNP 40V/60V 0.6A SOT26

***ark: General Purpose Transistor Sot363 T&r 3K

***itex: Transistor: NPN; bipolar; 45V; 0.1A; 210mW; -55+150 deg.C; SMD; SOT363

***ure Electronics: BC847BS Series Dual NPN 45 V 200 mW Small Signal Transistor SMT - SOT-363

***roFlash: Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon

***p One Stop Global: Trans GP BJT NPN 45V 0.1A 200mW Automotive 6-Pin SOT-363 T/R

***(Formerly Allied Electronics): Transistor Dual NPN 45V 0.1A SOT363-6 | Diodes Inc BC847BS-7-F

***ment14 APAC: TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal

Market price

부분 #	제조	설명	재고	가격
HN2C01FU-GR(T5L,F) DISTI # C1S751200945236	Toshiba America Electronic Components	Trans GP BJT NPN 50V 0.15A 6-Pin US T/R RoHS: Compliant	2900	1000:$0.3280 100:$0.3450
HN2C01FU-GR(T5L,F) DISTI # HN2C01FU-GR(T5LF)CT-ND	Toshiba America Electronic Components	TRANS 2NPN 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8735In Stock	1000:$0.0784 500:$0.1022 250:$0.1278 100:$0.1806 25:$0.2384 10:$0.3070 1:$0.4300
HN2C01FU-GR(T5L,F) DISTI # HN2C01FU-GR(T5LF)DKR-ND	Toshiba America Electronic Components	TRANS 2NPN 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8735In Stock	1000:$0.1045 500:$0.1363 250:$0.1703 100:$0.2407 25:$0.3180 10:$0.4090 1:$0.5700
HN2C01FU-GR(T5L,F) DISTI # HN2C01FU-GR(T5LF)TR-ND	Toshiba America Electronic Components	TRANS 2NPN 50V 0.15A US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	150000:$0.0294 75000:$0.0331 30000:$0.0353 15000:$0.0375 6000:$0.0441 3000:$0.0507
HN2C01FU-GR(T5L,F) DISTI # 757-HN2C01FU-GRT5LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 RoHS: Compliant	5450	1:$0.5500 10:$0.3030 100:$0.1300 1000:$0.1000 3000:$0.0760 9000:$0.0680 24000:$0.0630 45000:$0.0560 99000:$0.0540

영상	부분 #	설명
	Mfr.#: HN2C01FU-GR(T5L,F) OMO.#: OMO-HN2C01FU-GR-T5L-F-	Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
	Mfr.#: HN2C01FU-GR(T5L,F) OMO.#: OMO-HN2C01FU-GR-T5L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
	Mfr.#: HN2C01FU-GR(T5LF)DKR-ND OMO.#: OMO-HN2C01FU-GR-T5LF-DKR-ND-1190	신규 및 오리지널
	Mfr.#: HN2C01FU-Y(TE85LFCT-ND OMO.#: OMO-HN2C01FU-Y-TE85LFCT-ND-1190	신규 및 오리지널
	Mfr.#: HN2C01FU-Y(TE85LFTR-ND OMO.#: OMO-HN2C01FU-Y-TE85LFTR-ND-1190	신규 및 오리지널
	Mfr.#: HN2C01FU-GR OMO.#: OMO-HN2C01FU-GR-1190	150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
	Mfr.#: HN2C01FU-GR(L1G) OMO.#: OMO-HN2C01FU-GR-L1G--1190	신규 및 오리지널
	Mfr.#: HN2C01FU-Y OMO.#: OMO-HN2C01FU-Y-1190	신규 및 오리지널
	Mfr.#: HN2C01FU-Y(TE85L,F OMO.#: OMO-HN2C01FU-Y-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR	신규 및 오리지널
	Mfr.#: HN2C01FU-Y(TE85L,F) OMO.#: OMO-HN2C01FU-Y-TE85L-F--1190	신규 및 오리지널

HN2C01FU-GR(T5L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes