BSC090N03MSGATMA1

Mfr. #:: BSC090N03MSGATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSC090N03MSGATMA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TDSON-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 48 A

Rds On - 드레인 소스 저항:: 7.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 24 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 32 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.27 mm

길이:: 5.9 mm

시리즈:: OptiMOS 3M

트랜지스터 유형:: 1 N-Channel

너비:: 5.15 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 28 S

가을 시간:: 5.4 ns

상품 유형:: MOSFET

상승 시간:: 5 ns

공장 팩 수량:: 5000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 8.8 ns

일반적인 켜기 지연 시간:: 9 ns

부품 번호 별칭:: BSC090N03MS BSC9N3MSGXT G SP000313120

Tags: BSC090N03MSGA, BSC090N03MSG, BSC090N03M, BSC090N, BSC090, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC090N03MSGATMA1 설명

***ure Electronics: Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

부분 #	제조	설명	재고	가격
BSC090N03MSGATMA1 DISTI # V72:2272_06390969	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2158 1000:$0.2398 500:$0.2885 250:$0.2917 100:$0.2949 25:$0.4125 10:$0.4175 1:$0.4797
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8314In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.2692
BSC090N03MSGATMA1 DISTI # 26195690	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2158 1000:$0.2398 500:$0.2885 250:$0.2917 100:$0.2949 35:$0.4125
BSC090N03MSGATMA1 DISTI # 27490114	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	50000:$0.2274 20000:$0.2284 10000:$0.2293 5000:$0.2303
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC090N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	5000:$0.2399 10000:$0.2389 20000:$0.2379 30000:$0.2379 50000:$0.2369
BSC090N03MSGATMA1. DISTI # 31AC8220	Infineon Technologies AG	TRANSITIONAL MOSFETS	0	1:$0.2400 10000:$0.2390 20000:$0.2380 50000:$0.2370
BSC090N03MS G DISTI # 726-BSC090N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	9339	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC090N03MSGATMA1 DISTI # 726-BSC090N03MSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	3552	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910 5000:$0.2450
BSC090N03MSGXT DISTI # 726-BSC090N03MSGXT	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M	0	5000:$0.2450
BSC090N03MSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	15000	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
BSC090N03MSGATMA1	Infineon Technologies AG	Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	200Cut Tape/Mini-Reel	1:$0.3650 100:$0.3150 250:$0.3050 500:$0.3000 1500:$0.2800
BSC090N03MSGATMA1 DISTI # 9062940P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, RL	3275	125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # 9062940	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, PK	825	25:£0.4010 125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,43A,32W,PG-TDSON-8	4993	1:$0.5464 5:$0.4053 25:$0.3202 100:$0.2835 500:$0.2640
BSC090N03MSGATMA1 DISTI # C1S322000606326	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	250:$0.2659 100:$0.2954 25:$0.4133 10:$0.4207
BSC090N03MSGATMA1 DISTI # C1S322000241749	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.2540

관련 상품

영상	부분 #	설명
	Mfr.#: XC2C384-10TQG144C OMO.#: OMO-XC2C384-10TQG144C	CPLD - Complex Programmable Logic Devices XC2C384-10TQG144C
	Mfr.#: LM317EMP/NOPB OMO.#: OMO-LM317EMP-NOPB	Linear Voltage Regulators 3-TERMINAL ADJ REG
	Mfr.#: GRM31CR71H475KA12L OMO.#: OMO-GRM31CR71H475KA12L	Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 50Volts 10%
	Mfr.#: GRM31CR71H475KA12L OMO.#: OMO-GRM31CR71H475KA12L-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 50Volts 10%
	Mfr.#: SN65HVD234DR OMO.#: OMO-SN65HVD234DR-TEXAS-INSTRUMENTS	CAN Interface IC SLEEP MODE
	Mfr.#: XC2C384-10TQG144C OMO.#: OMO-XC2C384-10TQG144C-XILINX	Field-Programmable Gate Array
	Mfr.#: LM317EMP/NOPB OMO.#: OMO-LM317EMP-NOPB-TEXAS-INSTRUMENTS	IC REG LIN POS ADJ 1A SOT223-4
	Mfr.#: CRCW0603499RFKEAC OMO.#: OMO-CRCW0603499RFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 499R 1% ET1
	Mfr.#: CRCW0603100KFKEAC OMO.#: OMO-CRCW0603100KFKEAC-VISHAY-DALE	D11/CRCW0603-C 100 100K 1% ET1
	Mfr.#: 5000 OMO.#: OMO-5000-OHMITE	Knobs & Dials 2-3/16' 1-100DIAL

유효성

재고:: Available
주문 시:: 1986
수량 입력:

BSC090N03MSGATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.67~~; ~~US$0.67~~

10: ~~US$0.56~~; ~~US$5.62~~

100: ~~US$0.36~~; ~~US$36.30~~

1000: ~~US$0.29~~; ~~US$291.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

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BSC090N03MSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes