BFP181E7764HTSA1

Mfr. #:: BFP181E7764HTSA1
제조사:: Infineon Technologies
설명:: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BFP181E7764HTSA1 데이터 시트
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HTML Datasheet:: BFP181E7764HTSA1 Datasheet BFP181E7764HTSA1 Datasheet (P4-P6)BFP181E7764HTSA1 Datasheet (P7)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: RF 양극성 트랜지스터

RoHS:: Y

시리즈:: BFP181

기술:: 시

패키지/케이스:: SOT-143-4

포장:: 릴

상표:: 인피니언 테크놀로지스

상품 유형:: RF 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 181 BFP BFP181E7764XT E7764 SP000011013

Tags: BFP181E7764, BFP181E7, BFP181E, BFP181, BFP18, BFP1, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP181E7764HTSA1 설명

***p One Stop: Trans RF BJT NPN 12V 0.02A Automotive 4-Pin(3+Tab) SOT-143 T/R

***nell: TRANSISTOR, RF, AEC-Q101, NPN, SOT-143; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 8GHz; Power Dissipation Pd: 175mW; DC Collector Current: 20mA; DC Current Gain hFE: 70hFE; RF Transistor Case: SOT-143; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA | Summary of Features: For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA; fT = 8 GHz, F = 0.9 dB at 900 MHz; Pb-free (RoHS compliant) package1); Qualification report according to AEC-Q101 available | Target Applications: Wireless Communications; For amplifier and oscillator applications in RF Front-end

*** Stop Electro: Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 50V 0.1A 3-Pin SOT-416FL T/R

***nell: TRANS, NPN, 50V, 0.1A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 30V 0.5A 3-Pin SOT-416FL T/R

***i-Key: TRANS NPN 30V 0.5A EMT3F

***nell: TRANS, NPN, 30V, 0.5A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 360MHz; Power Dissipation Pd: 150mW; DC Collector Current: 500mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 20V 0.2A 3-Pin SOT-416FL T/R

***nell: TRANSISTOR, NPN, 20V, 0.2A, SOT-416FL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***i-Key: TRANS NPN 20V 0.2A EMT3F

***ark: Transistor,bjt,npn,30V V(Br)Ceo,100Ma I(C),to-236Aa Rohs Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***el Electronic: Transistor (BJT) - Discrete ON Semiconductor BC848BMTF SOT 23-3

*** Electronic Components: Bipolar Transistors - BJT SOT-23 NPN GP AMP

***Yang: Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel

***ca Corp: RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN

***ical: Trans RF BJT NPN 30V 0.08A 450mW Automotive 4-Pin SOT-143R T/R

***ark: Trans Gp Bjt Npn 16V 0.08A Automotive 4-Pin(3+Tab) Sot-143B T/R Rohs Compliant: Yes |Nxp BFU550XRR

***nell: TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 15mA; DC Current Gain hFE: 95hFE; RF Transistor Case: SOT-143R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU550XR Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***et: Trans GP BJT NPN 6V 0.01A 4-Pin(3+Tab) SOT-143R T/R

***ponent Stockers USA: L BAND Si NPN RF SMALL SIGNAL TRANSISTOR

***i-Key: TRANS NPN 4.5V 18GHZ SOT143R

Market price

부분 #	제조	설명	재고	가격
BFP181E7764HTSA1 DISTI # V72:2272_06391231	Infineon Technologies AG	Trans RF BJT NPN 12V 0.02A Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	3000	3000:$0.0637 1000:$0.0786 500:$0.0885 250:$0.0983 100:$0.1093 25:$0.2455 10:$0.2546 1:$0.3895
BFP181E7764HTSA1 DISTI # BFP181E7764HTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT143-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2466In Stock	1000:$0.0879 500:$0.1146 100:$0.1731 10:$0.3060 1:$0.4100
BFP181E7764HTSA1 DISTI # BFP181E7764HTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT143-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2466In Stock	1000:$0.0879 500:$0.1146 100:$0.1731 10:$0.3060 1:$0.4100
BFP181E7764HTSA1 DISTI # BFP181E7764HTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT143-4 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	150000:$0.0475 75000:$0.0493 30000:$0.0556 15000:$0.0594 6000:$0.0668 3000:$0.0742
BFP181E7764HTSA1 DISTI # 30296572	Infineon Technologies AG	Trans RF BJT NPN 12V 0.02A Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	3000	3000:$0.0637 1000:$0.0786 500:$0.0885 250:$0.0983 135:$0.1093
BFP181E7764HTSA1 DISTI # BFP181E7764HTSA1	Infineon Technologies AG	Trans GP BJT NPN 12V 0.02A 4-Pin(3+Tab) SOT-143 T/R - Tape and Reel (Alt: BFP181E7764HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0535 15000:$0.0515 24000:$0.0497 45000:$0.0480 90000:$0.0471
BFP181E7764HTSA1 DISTI # 34AC1353	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-143,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:175mW,DC Collector Current:20mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes	8468	1:$0.4200 10:$0.2680 25:$0.2170 50:$0.1660 100:$0.1150 250:$0.1060 500:$0.0970 1000:$0.0880
BFP181E7764HTSA1. DISTI # 31AC8171	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:175mW,DC Collector Current:20mA,DC Current Gain hFE:70hFE,RF Transistor Case:SOT-143,No. of Pins:4Pins	0	1:$0.0620 15000:$0.0580 24000:$0.0550 45000:$0.0520 90000:$0.0520
BFP181E7764HTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN RoHS: Compliant	6000	1000:$0.0500 25:$0.0600 100:$0.0600 500:$0.0600 1:$0.0700
BFP181E7764HTSA1 DISTI # 726-BFP181E7764HTSA1	Infineon Technologies AG	RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant	8960	1:$0.4200 10:$0.2680 100:$0.1150 1000:$0.0880 3000:$0.0670 9000:$0.0600 24000:$0.0560
BFP 181 E7764 DISTI # 726-BFP181E7764	Infineon Technologies AG	RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant	10765	1:$0.4100 10:$0.3060 100:$0.1150 1000:$0.0880 3000:$0.0670 9000:$0.0600 24000:$0.0560
BFP181E7764HTSA1 DISTI # 8922355P	Infineon Technologies AG	RF TRANSISTOR BJT NPN 12V 0.02A SOT143, RL	2040	300:£0.0730 1200:£0.0640 3000:£0.0560
BFP181E7764HTSA1 DISTI # 2781212	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-143 RoHS: Compliant	8478	5:£0.2310 25:£0.0850 100:£0.0790 250:£0.0730 500:£0.0620
BFP181E7764HTSA1 DISTI # 2781212	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-143 RoHS: Compliant	8568	5:$0.4290 25:$0.3220 100:$0.2060 250:$0.1560 500:$0.1290 1000:$0.1170 5000:$0.1070
BFP181E7764HTSA1 DISTI # C1S322000245754	Infineon Technologies AG	Trans RF BJT NPN 12V 0.02A 175mW Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	3000	250:$0.0983 100:$0.1093 25:$0.2455

영상	부분 #	설명
	Mfr.#: BFP181E7764HTSA1 OMO.#: OMO-BFP181E7764HTSA1	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFP181E7764 OMO.#: OMO-BFP181E7764-INFINEON-TECHNOLOGIES	Trans GP BJT NPN 12V 0.02A Automotive 4-Pin(3+Tab) SOT-143 T/R
	Mfr.#: BFP181E7764XT OMO.#: OMO-BFP181E7764XT-INFINEON-TECHNOLOGIES	신규 및 오리지널
	Mfr.#: BFP181E7765 OMO.#: OMO-BFP181E7765-INFINEON-TECHNOLOGIES	신규 및 오리지널
	Mfr.#: BFP181E7764HTSA1 OMO.#: OMO-BFP181E7764HTSA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors NPN Silicon RF TRANSISTOR

BFP181E7764HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes