IPP60R600P7XKSA1

IPP60R600P7XKSA1
Mfr. #:
IPP60R600P7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R600P7XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
6 A
Rds On - 드레인 소스 저항:
490 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
9 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
30 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
튜브
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
19 ns
상품 유형:
MOSFET
상승 시간:
6 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
37 ns
일반적인 켜기 지연 시간:
7 ns
부품 번호 별칭:
IPP60R600P7 SP001606032
단위 무게:
0.063493 oz
Tags
IPP60R6, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 600 mOhm 9 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 6A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Rohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
부분 # 제조 설명 재고 가격
IPP60R600P7XKSA1
DISTI # V99:2348_17076888
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
  • 1:$1.5800
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
479In Stock
  • 5000:$0.6210
  • 2500:$0.6537
  • 500:$0.8872
  • 100:$1.0740
  • 25:$1.3076
  • 10:$1.3770
  • 1:$1.5400
IPP60R600P7XKSA1
DISTI # 32925524
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube1000
  • 500:$0.5569
IPP60R600P7XKSA1
DISTI # 26198599
Infineon Technologies AGTrans MOSFET N-CH 600V 6A Tube188
  • 1000:$0.6669
  • 500:$0.8305
  • 100:$0.9527
  • 10:$1.2310
IPP60R600P7XKSA1
DISTI # SP001606032
Infineon Technologies AGLOW POWER_NEW (Alt: SP001606032)
RoHS: Compliant
Min Qty: 50
Europe - 490
  • 500:€0.5289
  • 300:€0.5689
  • 200:€0.6169
  • 100:€0.6729
  • 50:€0.8219
IPP60R600P7XKSA1
DISTI # IPP60R600P7XKSA1
Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPP60R600P7XKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 10000:$0.5649
  • 5000:$0.5749
  • 3000:$0.5949
  • 2000:$0.6169
  • 1000:$0.6399
IPP60R600P7XKSA1
DISTI # 34AC1715
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power Dissipation RoHS Compliant: Yes170
  • 1000:$0.6750
  • 500:$0.8530
  • 100:$0.9670
  • 10:$1.2500
  • 1:$1.4600
IPP60R600P7XKSA1
DISTI # 726-IPP60R600P7XKSA1
Infineon Technologies AGMOSFET
RoHS: Compliant
1219
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9570
  • 500:$0.8450
  • 1000:$0.6680
IPP60R600P7XKSA1
DISTI # 2784033
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220150
  • 500:£0.6450
  • 250:£0.6880
  • 100:£0.7300
  • 10:£0.9970
  • 1:£1.2600
IPP60R600P7XKSA1
DISTI # 2784033
Infineon Technologies AGMOSFET, N-CH, 600V, 6A, TO-220
RoHS: Compliant
170
  • 5000:$0.9080
  • 1000:$0.9560
  • 500:$1.0200
  • 250:$1.1700
  • 100:$1.3900
  • 25:$1.7100
  • 5:$1.9500
영상 부분 # 설명
LM5113QDPRRQ1

Mfr.#: LM5113QDPRRQ1

OMO.#: OMO-LM5113QDPRRQ1

Gate Drivers 5A 100V HALF-BRIDGEGATEDRIVER Q GRADE
NTHL050N65S3HF

Mfr.#: NTHL050N65S3HF

OMO.#: OMO-NTHL050N65S3HF

MOSFET SF3 650V 50MOHM
BSC0504NSIATMA1

Mfr.#: BSC0504NSIATMA1

OMO.#: OMO-BSC0504NSIATMA1

MOSFET LV POWER MOS
IPP060N06NAKSA1

Mfr.#: IPP060N06NAKSA1

OMO.#: OMO-IPP060N06NAKSA1

MOSFET N-Ch 60V 45A TO220-3
THVD1500DR

Mfr.#: THVD1500DR

OMO.#: OMO-THVD1500DR

RS-485 Interface IC 5V RS-485 Transceivr up to 300kbps
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
HRG3216P-1000-B-T1

Mfr.#: HRG3216P-1000-B-T1

OMO.#: OMO-HRG3216P-1000-B-T1-SUSUMU

RES SMD 100 OHM 0.1% 1W 1206
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI-STMICROELECTRONICS

STM32F767ZIT6 Microcontroller Development Board 0.032768MHz CPU 2MB Flash
BSC0504NSIATMA1

Mfr.#: BSC0504NSIATMA1

OMO.#: OMO-BSC0504NSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 21A TDSON-8
CRF1206-FZ-R010ELF

Mfr.#: CRF1206-FZ-R010ELF

OMO.#: OMO-CRF1206-FZ-R010ELF-BOURNS

RESMETALSTRIP 1206 R010 1% 1W
유효성
재고:
Available
주문 시:
4000
수량 입력:
IPP60R600P7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
시작
Top