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FDP3632

FDP3632
Mfr. #:
FDP3632
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 100V 80a .9 Ohms/VGS=1V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDP3632 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
80 A
Rds On - 드레인 소스 저항:
7.5 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
310 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
시리즈:
FDP3632
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
가을 시간:
46 ns
상품 유형:
MOSFET
상승 시간:
39 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
96 ns
일반적인 켜기 지연 시간:
30 ns
부품 번호 별칭:
FDP3632_NL
단위 무게:
0.063493 oz
Tags
FDP363, FDP36, FDP3, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
Transistor MOSFET Negative Channel 100 Volt 12A 3-Pin(3+Tab) TO-220AB Tube
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ. Recommended replacement is FDP090N10
***p One Stop Japan
Trans MOSFET N-CH 100V 12A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans MOSFET N-CH 100V 12A 3-Pin (3+Tab) TO-220AB Tube
***et Europe
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 100 V 9 mOhm PowerTrench Mosfet - TO-220AB
***et
TO-220AB, SINGLE, N-CH, 100V, 9 MOHM PWR ULTRAFET TRENCH MOS
*** Source Electronics
MOSFET N-CH 100V 80A TO-220AB
***ark
Fet 100V 9.0 Mohm To220 Rohs Compliant: Yes
***ser
MOSFETs 100V, 80a .9 Ohms/VGS=1V
***Components
MOSFET Transistor
***ment14 APAC
N CH MOSFET, 100V, 80A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:820A; SMD Marking:FDP3632; Voltage Vgs Max:4V
부분 # 제조 설명 재고 가격
FDP3632
DISTI # FDP3632-ND		ON SemiconductorMOSFET N-CH 100V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2208In Stock
  • 1600:$1.7245
  • 800:$1.8409
  • 100:$2.4810
  • 10:$3.0050
  • 1:$3.3600
FDP3632
DISTI # FDP3632		ON SemiconductorTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP3632)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1400
  • 1:$1.1900
  • 10:$1.0900
  • 25:$1.0900
  • 50:$1.0900
  • 100:$1.0900
  • 500:$1.0900
  • 1000:$1.0900
FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		9511
  • 1000:$1.3800
  • 500:$1.4500
  • 100:$1.5100
  • 25:$1.5800
  • 1:$1.7000
FDP3632
DISTI # 512-FDP3632		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Compliant		1048
  • 1:$2.8100
  • 10:$2.3900
  • 100:$2.0700
  • 250:$1.9600
  • 500:$1.7600
FDP3632_Q
DISTI # 512-FDP3632_Q		ON SemiconductorMOSFET 100V 80a .9 Ohms/VGS=1V
RoHS: Not compliant		0
    FDP3632Fairchild Semiconductor Corporation 22
      FDP3632
      DISTI # 6714828P      		ON SemiconductorMOSFET N-CHANNEL 100V 12A TO220AB, TU12
      • 10:£2.1500
      • 20:£1.9400
      FDP3632
      DISTI # FDP3632      		ON SemiconductorTransistor: N-MOSFET,unipolar,100V,12A,310W,TO220AB68
      • 1:$3.9800
      • 3:$3.4100
      • 10:$2.7400
      • 25:$2.4700
      FDP3632Fairchild Semiconductor CorporationPower Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Not Compliant      		Europe - 100
        FDP3632
        DISTI # 1095015        		ON Semiconductor 
        RoHS: Compliant        		0
        • 500:$2.7900
        • 250:$3.1000
        • 100:$3.2800
        • 10:$3.7800
        • 1:$4.4500
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        유효성
        재고:
        851
        주문 시:
        2834
        수량 입력:
        FDP3632의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$2.92
        US$2.92
        10
        US$2.48
        US$24.80
        100
        US$2.15
        US$215.00
        250
        US$2.04
        US$510.00
        500
        US$1.83
        US$915.00
        1000
        US$1.58
        US$1 580.00
        2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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