IGZ100N65H5XKSA1

Mfr. #:: IGZ100N65H5XKSA1
제조사:: Infineon Technologies
설명:: IGBT Transistors IGBT PRODUCTS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IGZ100N65H5XKSA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IGZ100N65H5XKSA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

기술:: 시

패키지/케이스:: TO-247-4

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.65 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 161 A

Pd - 전력 손실:: 536 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: TRENCHSTOP 5 H5

포장:: 튜브

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 240

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IGZ100N65H5 SP001160058

단위 무게:: 0.217475 oz

Tags: IGZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGZ100N65H5XKSA1 설명

***ical: Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube

***ark: Igbt, Single, 650V, 161A, To-247; Dc Collector Current:161A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:536W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:4Pins; Rohs Compliant: Yes

***ineon: To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration. | Summary of Features: Extremely low control inductance loop; Emitter pin for driver feedback; Same creepage distance of collector emitter as standard TO-247 package; 20% reduction in total switching losses compared to TO-247 package using same technology | Benefits: System efficiency improvement compared to standard TO-247; Benefit increase at high current conditions; IGBTs operates under lower junction temperature; Much less power dissipation under overcurrent conditions | Target Applications: Uninterruptible power supply; Datacenters; Telecom Rectifiers; Photovoltaic Inverters; Server

IGZ100N65H5XKSA1 추가 정보

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

부분 #	제조	설명	재고	가격
IGZ100N65H5XKSA1 DISTI # V99:2348_06377191	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube	0
IGZ100N65H5XKSA1 DISTI # V36:1790_06377191	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube	0	240000:$3.4040 120000:$3.4060 24000:$3.6280 2400:$4.0160 240:$4.0800
IGZ100N65H5XKSA1 DISTI # IGZ100N65H5XKSA1-ND	Infineon Technologies AG	IGBT 650V 100A SGL TO-247-4 RoHS: Compliant Min Qty: 1 Container: Tube	205In Stock	720:$4.7557 240:$5.4614 25:$6.2900 10:$6.5970 1:$7.3000
IGZ100N65H5XKSA1 DISTI # IGZ100N65H5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Rail/Tube (Alt: IGZ100N65H5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$3.6900 2400:$3.6900 960:$3.8900 480:$3.9900 240:$4.1900
IGZ100N65H5XKSA1 DISTI # IGZ100N65H5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube - Bulk (Alt: IGZ100N65H5XKSA1) RoHS: Compliant Min Qty: 100 Container: Bulk	Americas - 0	500:$3.1900 1000:$3.1900 300:$3.2900 200:$3.4900 100:$3.5900
IGZ100N65H5XKSA1 DISTI # SP001160058	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 161A 4-Pin TO-247 Tube (Alt: SP001160058) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.9900 500:€3.1900 100:€3.2900 50:€3.4900 25:€3.5900 10:€3.7900 1:€4.0900
IGZ100N65H5XKSA1 DISTI # 49AC0267	Infineon Technologies AG	IGBT, SINGLE, 650V, 161A, TO-247,DC Collector Current:161A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:536W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:4Pins,RoHS Compliant: Yes	499	500:$4.5700 250:$5.0100 100:$5.2500 50:$5.6500 25:$6.0500 10:$6.3400 1:$7.0200
IGZ100N65H5XKSA1 DISTI # 726-IGZ100N65H5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS	236	1:$6.9500 10:$6.2800 25:$5.9900 100:$5.2000 250:$4.9600 500:$4.5200
IGZ100N65H5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 161A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	3790	1000:$3.3200 500:$3.4900 100:$3.6300 25:$3.7900 1:$4.0800
IGZ100N65H5XKSA1 DISTI # IGZ100N65H5XKSA1	Infineon Technologies AG	Transistor: IGBT,650V,101A,268W,TO247-4,Series: H5	99	120:$3.5500 30:$3.9500 5:$4.9200 1:$5.7100
IGZ100N65H5XKSA1 DISTI # IGZ100N65H5	Infineon Technologies AG	650V 161A 536W TO247-4 RoHS: Compliant	240	1:€7.0300 10:€4.0300 50:€3.0300 100:€2.9100
IGZ100N65H5XKSA1 DISTI # 2839422	Infineon Technologies AG	IGBT, SINGLE, 650V, 161A, TO-247	624	500:£3.5100 250:£3.8600 100:£4.0500 10:£4.6700 1:£5.9300
IGZ100N65H5XKSA1 DISTI # 2839422	Infineon Technologies AG	IGBT, SINGLE, 650V, 161A, TO-247 RoHS: Compliant	499	1000:$6.1700 500:$6.4800 250:$6.8400 100:$7.2400 10:$8.1700 1:$8.7500

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유효성

재고:: 228
주문 시:: 2211
수량 입력:

IGZ100N65H5XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$6.95~~; ~~US$6.95~~

10: ~~US$6.28~~; ~~US$62.80~~

25: ~~US$5.99~~; ~~US$149.75~~

100: ~~US$5.20~~; ~~US$520.00~~

250: ~~US$4.96~~; ~~US$1 240.00~~

500: ~~US$4.52~~; ~~US$2 260.00~~

시작

IGZ 6

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IGZ100N65H5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes