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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RF1S30P05SM DISTI # RF1S30P05SM | Renesas Electronics Corporation | - Bulk (Alt: RF1S30P05SM) RoHS: Not Compliant Min Qty: 410 Container: Bulk | Americas - 0 |
|
| IRF1S30P05SM | Harris Semiconductor | RoHS: Not Compliant | 400 |
|
| RF1S30P05 | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 1040 |
|
| RF1S30P05SM | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 92 |
|
| RF1S30P05SM | Fairchild Semiconductor Corporation | 139 | ||
| RF1S30P05SM | Intersil Corporation | 45 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RF1S22N10SM9A OMO.#: OMO-RF1S22N10SM9A-1190 |
MOSFET 100V Single |
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Mfr.#: RF1S30P06 OMO.#: OMO-RF1S30P06-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S40N10LESM9AR4363 |
신규 및 오리지널 |
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: RF1S50N06SM9A OMO.#: OMO-RF1S50N06SM9A-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S640SMA OMO.#: OMO-RF1S640SMA-1190 |
신규 및 오리지널 |
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Mfr.#: RF1S840S OMO.#: OMO-RF1S840S-1190 |
신규 및 오리지널 |
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Mfr.#: RF1S9540SM OMO.#: OMO-RF1S9540SM-1190 |
신규 및 오리지널 |
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Mfr.#: RF1S9540SM9A OMO.#: OMO-RF1S9540SM9A-1190 |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S9640H022 OMO.#: OMO-RF1S9640H022-1190 |
신규 및 오리지널 |