BSC032N04LSATMA1

Mfr. #:: BSC032N04LSATMA1
제조사:: Infineon Technologies
설명:: MOSFET MV POWER MOS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSC032N04LSATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: BSC032N04LSATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TDSON-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 40 V

Id - 연속 드레인 전류:: 98 A

Rds On - 드레인 소스 저항:: 2.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 1.2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 35 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 52 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.27 mm

길이:: 5.9 mm

시리즈:: OptiMOS 5

트랜지스터 유형:: 1 N-Channel

너비:: 5.15 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 75 S

가을 시간:: 3 ns

상품 유형:: MOSFET

상승 시간:: 4 ns

공장 팩 수량:: 5000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 19 ns

일반적인 켜기 지연 시간:: 4 ns

부품 번호 별칭:: BSC032N04LS SP001067018

Tags: BSC032N04, BSC032N0, BSC032, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC032N04LSATMA1 설명

***ure Electronics: BSC032xx Series 40 V 98 A 22 nC SMT OptiMOS Power Mosfet - TDSON-8

***nell: MOSFET, N-CH, 40V, 98A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 98A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 52W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ure Electronics: Single N-Channel 40 V 2.7 mOhm 64 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:83W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ical: Trans MOSFET N-CH 40V 23A Automotive 8-Pin TDSON EP T/R

***nell: MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***ure Electronics: N-Channel 30 V 2.5 mO 74 nC 36 nC Surface Mount OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 30V, 100A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***emi: Single N-Channel Power MOSFET 40V, 130A, 2.5mΩ 1500 / Tape & Reel.

***ical: Trans MOSFET N-CH 40V 27A Automotive 5-Pin(4+Tab) SO-FL T/R

***Yang: Trans MOSFET N-CH 40V 127A 5-Pin DFN T/R - Tape and Reel

*** Stop Electro: Power Field-Effect Transistor, 130A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: REEL / NFET SO8FL 40V 126A 2.8MO

***enic: 40V 130A 2m´Î@10V50A 83W 2V@90uA 37pF@25V N Channel 3.1nF@25V [email protected] -55¡Í~+175¡Í@(Tj) DFN-5 MOSFETs ROHS

***el Electronic: RES SMD 34.8K OHM 1% 1/10W 0603

***r Electronics: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R

***icroelectronics: Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package

***el Electronic: Ceramic Capacitors 1000pF Radial, Disc ±10% B Bulk 1 (Unlimited) General Purpose Through Hole -25°C~105°C CAP CER 1000PF 2KV RADIAL

***emi: Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks

***ark: Power MOSFET 30V 102A 3.6 mOhm Single N-Channel u8FL / REEL RoHS Compliant: Yes

***Yang: Trans MOSFET N-CH 30V 102A 8-Pin WDFN T/R - Tape and Reel

*** Electronics: MOSFET NFET U8FL 30V 102 A 3.6MOH

***r Electronics: Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: MOSFET, Single N-Channel, 30 V, 102 A

***ment14 APAC: MOSFET'S - SINGLE MOSFET'S TRANSISTORS;

***i-Key: MOSFET N-CH 30V 22A/102A 8WDFN

***enic: 30V 102A 2.9m´Î@10V30A 3.2W 2.2V@250uA 71pF@15V N Channel 1.988nF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS

BSC032N04LSATMA1 추가 정보

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

부분 #	제조	설명	재고	가격
BSC032N04LSATMA1 DISTI # V72:2272_06384348	Infineon Technologies AG	Trans MOSFET N-CH 40V 21A 8-Pin TDSON T/R	1418	1000:$0.4820 500:$0.5913 250:$0.6447 100:$0.6672 25:$0.8309 10:$0.8409 1:$0.9549
BSC032N04LSATMA1 DISTI # BSC032N04LSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 21A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4837In Stock	1000:$0.6089 500:$0.7713 100:$0.9946 10:$1.2580 1:$1.4200
BSC032N04LSATMA1 DISTI # BSC032N04LSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 21A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4837In Stock	1000:$0.6089 500:$0.7713 100:$0.9946 10:$1.2580 1:$1.4200
BSC032N04LSATMA1 DISTI # BSC032N04LSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 21A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.5242
BSC032N04LSATMA1 DISTI # 31077601	Infineon Technologies AG	Trans MOSFET N-CH 40V 21A 8-Pin TDSON T/R	5000	5000:$0.5261
BSC032N04LSATMA1 DISTI # 26195435	Infineon Technologies AG	Trans MOSFET N-CH 40V 21A 8-Pin TDSON T/R	1318	1000:$0.4820 500:$0.5913 250:$0.6447 100:$0.6672 25:$0.8309 14:$0.8409
BSC032N04LSATMA1 DISTI # BSC032N04LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 98A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC032N04LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.5159 10000:$0.4969 20000:$0.4789 30000:$0.4629 50000:$0.4549
BSC032N04LSATMA1 DISTI # 13AC8330	Infineon Technologies AG	MOSFET, N-CH, 40V, 98A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes	2577	1:$1.1800 10:$1.0100 25:$0.9300 50:$0.8510 100:$0.7710 250:$0.7260 500:$0.6810 1000:$0.5380
BSC032N04LSATMA1	Infineon Technologies AG	BSC032xx Series 40 V 98 A 22 nC SMT OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	100Cut Tape/Mini-Reel	1:$0.7200 100:$0.6250 250:$0.6050 500:$0.5900 1500:$0.5500
BSC032N04LS DISTI # 726-BSC032N04LS	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	7404	1:$1.1800 10:$1.0100 100:$0.7710 500:$0.6810 1000:$0.5380
BSC032N04LSATMA1 DISTI # 726-BSC032N04LSATMA1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	945	1:$1.1800 10:$1.0100 100:$0.7710 500:$0.6810 1000:$0.5380 5000:$0.4770
BSC032N04LSATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 21A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2505	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
BSC032N04LSATMA1 DISTI # BSC032N04LSATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,83A,52W,PG-TDSON-8	4589	1:$0.9997 5:$0.8597 25:$0.6898 100:$0.5992 1000:$0.5578
BSC032N04LSATMA1 DISTI # 2725806	Infineon Technologies AG	MOSFET, N-CH, 40V, 98A, TDSON RoHS: Compliant	4172	5:£1.0900 25:£0.9750 100:£0.7430
BSC032N04LSATMA1 DISTI # C1S322000666498	Infineon Technologies AG	MOSFETs	1418	250:$0.6600 100:$0.6672 25:$0.8311 10:$0.8409
BSC032N04LSATMA1 DISTI # C1S322000579095	Infineon Technologies AG	MOSFETs	5000	5000:$0.5360
BSC032N04LSATMA1 DISTI # 2725806	Infineon Technologies AG	MOSFET, N-CH, 40V, 98A, TDSON RoHS: Compliant	2577	1:$2.2700 10:$2.0100 100:$1.5900 500:$1.2300 1000:$0.9710

영상	부분 #	설명
	Mfr.#: BSC059N04LS6ATMA1 OMO.#: OMO-BSC059N04LS6ATMA1	MOSFET
	Mfr.#: LDL1117S33R OMO.#: OMO-LDL1117S33R	LDO Voltage Regulators POWER MANAGEMENT
	Mfr.#: ERA-6AEB9313V OMO.#: OMO-ERA-6AEB9313V-PANASONIC	Thin Film Resistors - SMD 0805 931Kohm 0.1% 25ppm
	Mfr.#: LDL1117S33R OMO.#: OMO-LDL1117S33R-STMICROELECTRONICS	IC REG LINEAR 3.3V 1.2A SOT223
	Mfr.#: PHP01206E2001BST5 OMO.#: OMO-PHP01206E2001BST5-VISHAY	Thin Film Resistors - SMD 1watt 2Kohms .1% 25 PPM
	Mfr.#: CRCW06030000Z0EAC OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE	RES SMD 0 OHM JUMP 1/10W 0603
	Mfr.#: CRCW080510K0FKEAC OMO.#: OMO-CRCW080510K0FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 10K 1% ET1
	Mfr.#: CRCW08053K30FKEAC OMO.#: OMO-CRCW08053K30FKEAC-VISHAY-DALE	D12/CRCW0805-C 100 3K3 1% ET1
	Mfr.#: CRCW08050000Z0EAC OMO.#: OMO-CRCW08050000Z0EAC-VISHAY-DALE	D12/CRCW0805-C 0R0 ET1 E3
	Mfr.#: BSC059N04LS6ATMA1 OMO.#: OMO-BSC059N04LS6ATMA1-INFINEON-TECHNOLOGIES	TRENCH <= 40V

BSC032N04LSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes