1N5610e3 vs 1N5610DASJANTX vs 1N5610

 
PartNumber1N5610e31N5610DASJANTX1N5610
DescriptionTVS Diodes / ESD Suppressors TVSTVS Diodes - Transient Voltage Suppressors Transient Voltage Suppresso
ManufacturerMicrochip-Microsemi Commercial Components Group
Product CategoryTVS Diodes / ESD Suppressors-TVS - Diodes
RoHSY--
Product TypeTVS Diodes--
PolarityUnidirectional--
Number of Channels1 Channel--
Termination StyleAxial--
Breakdown Voltage33 V--
Working Voltage30.5 V--
Clamping Voltage47.6 V--
Ipp Peak Pulse Current32 A--
Package / CaseG-Package-2--
Pppm Peak Pulse Power Dissipation1.5 kW--
Pd Power Dissipation3 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
PackagingBulk-Bulk
Current Rating5 uA--
BrandMicrochip / Microsemi--
Factory Pack Quantity1--
SubcategoryTVS Diodes / ESD Suppression Diodes--
Series---
Type--Zener
Mounting Style--Through Hole
Package Case--G, Axial
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Through Hole
Applications--General Purpose
Supplier Device Package--G, Axial
Unidirectional Channels--1
Bidirectional Channels---
Voltage Reverse Standoff Typ--30.5V
Voltage Breakdown Min--33V
Voltage Clamping Max Ipp--47.6V
Current Peak Pulse 10 1000μs--32A
Power Peak Pulse--1500W (1.5kW)
Power Line Protection--No
Capacitance Frequency---
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