2N3442G vs 2N3442 vs 2N3442H

 
PartNumber2N3442G2N34422N3442H
DescriptionBipolar Transistors - BJT 10A 140V 117W NPNBipolar Transistors - BJT NPN Power SW
ManufacturerON SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-204-2TO-3-2-
Transistor PolarityNPNNPN-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max140 V160 V-
Collector Base Voltage VCBO160 V160 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage5 V5 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT80 kHz80 kHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 200 C-
Series2N34422N3442-
Height8.51 mm--
Length39.37 mm--
PackagingTrayTube-
Width26.67 mm--
BrandON SemiconductorCentral Semiconductor-
Continuous Collector Current10 A0.45 A-
DC Collector/Base Gain hfe Min207.5 at 10 A, 4 V-
Pd Power Dissipation117 W117 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10020-
SubcategoryTransistorsTransistors-
Unit Weight0.423993 oz0.225789 oz-
Part # Aliases-2N3442 PBFREE-
Top