 |  | | |
| PartNumber | 2N4261 | 2N4261/TR | 2N4261A |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Packaging | Foil Bag | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-72-3 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | - 15 V | - |
| Collector Base Voltage VCBO | - | - 15 V | - |
| Emitter Base Voltage VEBO | - | - 4.5 V | - |
| Collector Emitter Saturation Voltage | - | - 0.15 V | - |
| Maximum DC Collector Current | - | - 30 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 150 at - 10 mA, - 1 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at - 30 mA, - 1 V | - |
| Pd Power Dissipation | - | 200 mW | - |