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| PartNumber | 2N5050 | 2N5051 | 2N5050 PBFREE |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT NPN 125Vcbo 125Vceo 6.0Vebo 2.0A 40W |
| Manufacturer | Microchip | Microchip | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | Y |
| Packaging | Tray | Tray | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Central Semiconductor |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 30 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | - | Si |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-66-2 |
| Transistor Polarity | - | - | NPN |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 125 V |
| Collector Base Voltage VCBO | - | - | 125 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| Collector Emitter Saturation Voltage | - | - | 5 V |
| Gain Bandwidth Product fT | - | - | 10 MHz |
| Minimum Operating Temperature | - | - | - 65 C |
| Maximum Operating Temperature | - | - | + 175 C |
| Series | - | - | 2N50 |
| DC Current Gain hFE Max | - | - | 100 at 750 mA, 5 V |
| Continuous Collector Current | - | - | 2 A |
| DC Collector/Base Gain hfe Min | - | - | 25 at 750 mA, 5 V |
| Pd Power Dissipation | - | - | 40 W |