2N5400 PBFREE vs 2N5400 vs 2N5400-AT/P

 
PartNumber2N5400 PBFREE2N54002N5400-AT/P
DescriptionBipolar Transistors - BJT PNP 130Vcbo 120Veo 5.0Vebo 625mWBipolar Transistors - BJT PNP Gen Pr Amp
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYT-
TechnologySi--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max120 V120 V-
Collector Base Voltage VCBO130 V130 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.2 V0.5 V-
Gain Bandwidth Product fT400 MHz400 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2N542N5400-
DC Current Gain hFE Max240 at 10 mA, 5 V--
PackagingBulkBulk-
BrandCentral SemiconductorCentral Semiconductor-
Continuous Collector Current600 mA- 0.5 A-
DC Collector/Base Gain hfe Min40 at 10 mA, 5 V30-
Pd Power Dissipation1.5 W625 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Maximum DC Collector Current-0.6 A-
Height-5.33 mm-
Length-5.21 mm-
Width-4.19 mm-
Part # Aliases-2N5400 TIN/LEAD-
Unit Weight-0.016000 oz-
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